Light emission and structure of Nd-doped Si-rich-HfO <inf>2</inf> films prepared by magnetron sputtering in different atmospheres

Leonardo Gabriel Vega Macotela, Tetyana Torchynska, Larysa Khomenkova, Fabrice Gourbilleau

Research output: Contribution to journalArticleResearchpeer-review

Abstract

© 2019 Elsevier B.V. Radio-frequency magnetron sputtering was used to produce HfO 2 films doped with Nd, Si and N. The deposition was carried out in two different atmospheres: i) in pure argon plasma to grow Si-HfO 2 :Nd films, and ii) in argon-nitrogen mixed plasma to produce Si-N-HfO 2 :Nd films. The effect of annealing temperature on optical and structural properties of the films was investigated. Annealing was performed at T A = 800–1100 °C for t A = 15 min in nitrogen atmosphere. The evolution of film's properties was studied by means of the scanning electronic microscopy (SEM), energy dispersive X-ray spectroscopy (EDS), X-ray diffraction (XRD) and photoluminescence (PL) methods. It was observed that the film morphology depends significantly on the deposition atmosphere. For the Si-HfO 2 :Nd films, the presence of the grains with the mean size about 100 nm was detected by the SEM method. The tetragonal HfO 2 and SiO 2 phases have been detected by the XRD method after film annealing at 950 °C. PL spectra of these films are complex and demonstrate several PL bands in the visible (400–750 nm) and infrared (800–1430 nm) spectral ranges. Their contribution depends on the annealing temperature and governs the shape of total PL spectrum. In contrary, the Si-N-HfO 2 :Nd films showed unstructured smooth surface as well as featureless PL spectra. Whatever the annealing temperature, they demonstrate broad unstructured PL band with the peak within 440–480 nm. Peculiarities of PL spectra of both types of the films and the mechanism of phase separation are analyzed and discussed.
Original languageAmerican English
Pages (from-to)263-268
Number of pages236
JournalMaterials Chemistry and Physics
DOIs
StatePublished - 1 May 2019

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Light emission
Magnetron sputtering
light emission
magnetron sputtering
atmospheres
atmosphere
Photoluminescence
annealing
photoluminescence
Annealing
Argon
argon
microscopy
Microscopic examination
Nitrogen
X-ray diffraction
Scanning
Plasmas
plasma
nitrogen

Cite this

@article{f2b02a70177c40e4b408ba341060726c,
title = "Light emission and structure of Nd-doped Si-rich-HfO 2 films prepared by magnetron sputtering in different atmospheres",
abstract = "{\circledC} 2019 Elsevier B.V. Radio-frequency magnetron sputtering was used to produce HfO 2 films doped with Nd, Si and N. The deposition was carried out in two different atmospheres: i) in pure argon plasma to grow Si-HfO 2 :Nd films, and ii) in argon-nitrogen mixed plasma to produce Si-N-HfO 2 :Nd films. The effect of annealing temperature on optical and structural properties of the films was investigated. Annealing was performed at T A = 800–1100 °C for t A = 15 min in nitrogen atmosphere. The evolution of film's properties was studied by means of the scanning electronic microscopy (SEM), energy dispersive X-ray spectroscopy (EDS), X-ray diffraction (XRD) and photoluminescence (PL) methods. It was observed that the film morphology depends significantly on the deposition atmosphere. For the Si-HfO 2 :Nd films, the presence of the grains with the mean size about 100 nm was detected by the SEM method. The tetragonal HfO 2 and SiO 2 phases have been detected by the XRD method after film annealing at 950 °C. PL spectra of these films are complex and demonstrate several PL bands in the visible (400–750 nm) and infrared (800–1430 nm) spectral ranges. Their contribution depends on the annealing temperature and governs the shape of total PL spectrum. In contrary, the Si-N-HfO 2 :Nd films showed unstructured smooth surface as well as featureless PL spectra. Whatever the annealing temperature, they demonstrate broad unstructured PL band with the peak within 440–480 nm. Peculiarities of PL spectra of both types of the films and the mechanism of phase separation are analyzed and discussed.",
author = "{Vega Macotela}, {Leonardo Gabriel} and Tetyana Torchynska and Larysa Khomenkova and Fabrice Gourbilleau",
year = "2019",
month = "5",
day = "1",
doi = "10.1016/j.matchemphys.2019.03.007",
language = "American English",
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journal = "Materials Chemistry and Physics",
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Light emission and structure of Nd-doped Si-rich-HfO <inf>2</inf> films prepared by magnetron sputtering in different atmospheres. / Vega Macotela, Leonardo Gabriel; Torchynska, Tetyana; Khomenkova, Larysa; Gourbilleau, Fabrice.

In: Materials Chemistry and Physics, 01.05.2019, p. 263-268.

Research output: Contribution to journalArticleResearchpeer-review

TY - JOUR

T1 - Light emission and structure of Nd-doped Si-rich-HfO 2 films prepared by magnetron sputtering in different atmospheres

AU - Vega Macotela, Leonardo Gabriel

AU - Torchynska, Tetyana

AU - Khomenkova, Larysa

AU - Gourbilleau, Fabrice

PY - 2019/5/1

Y1 - 2019/5/1

N2 - © 2019 Elsevier B.V. Radio-frequency magnetron sputtering was used to produce HfO 2 films doped with Nd, Si and N. The deposition was carried out in two different atmospheres: i) in pure argon plasma to grow Si-HfO 2 :Nd films, and ii) in argon-nitrogen mixed plasma to produce Si-N-HfO 2 :Nd films. The effect of annealing temperature on optical and structural properties of the films was investigated. Annealing was performed at T A = 800–1100 °C for t A = 15 min in nitrogen atmosphere. The evolution of film's properties was studied by means of the scanning electronic microscopy (SEM), energy dispersive X-ray spectroscopy (EDS), X-ray diffraction (XRD) and photoluminescence (PL) methods. It was observed that the film morphology depends significantly on the deposition atmosphere. For the Si-HfO 2 :Nd films, the presence of the grains with the mean size about 100 nm was detected by the SEM method. The tetragonal HfO 2 and SiO 2 phases have been detected by the XRD method after film annealing at 950 °C. PL spectra of these films are complex and demonstrate several PL bands in the visible (400–750 nm) and infrared (800–1430 nm) spectral ranges. Their contribution depends on the annealing temperature and governs the shape of total PL spectrum. In contrary, the Si-N-HfO 2 :Nd films showed unstructured smooth surface as well as featureless PL spectra. Whatever the annealing temperature, they demonstrate broad unstructured PL band with the peak within 440–480 nm. Peculiarities of PL spectra of both types of the films and the mechanism of phase separation are analyzed and discussed.

AB - © 2019 Elsevier B.V. Radio-frequency magnetron sputtering was used to produce HfO 2 films doped with Nd, Si and N. The deposition was carried out in two different atmospheres: i) in pure argon plasma to grow Si-HfO 2 :Nd films, and ii) in argon-nitrogen mixed plasma to produce Si-N-HfO 2 :Nd films. The effect of annealing temperature on optical and structural properties of the films was investigated. Annealing was performed at T A = 800–1100 °C for t A = 15 min in nitrogen atmosphere. The evolution of film's properties was studied by means of the scanning electronic microscopy (SEM), energy dispersive X-ray spectroscopy (EDS), X-ray diffraction (XRD) and photoluminescence (PL) methods. It was observed that the film morphology depends significantly on the deposition atmosphere. For the Si-HfO 2 :Nd films, the presence of the grains with the mean size about 100 nm was detected by the SEM method. The tetragonal HfO 2 and SiO 2 phases have been detected by the XRD method after film annealing at 950 °C. PL spectra of these films are complex and demonstrate several PL bands in the visible (400–750 nm) and infrared (800–1430 nm) spectral ranges. Their contribution depends on the annealing temperature and governs the shape of total PL spectrum. In contrary, the Si-N-HfO 2 :Nd films showed unstructured smooth surface as well as featureless PL spectra. Whatever the annealing temperature, they demonstrate broad unstructured PL band with the peak within 440–480 nm. Peculiarities of PL spectra of both types of the films and the mechanism of phase separation are analyzed and discussed.

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