Intrinsic transit times and noise transport time study of Si/SiGe:C Heterejunction bipolar transistors

Eloy Ramirez-Garcia, Frederic Aniel, Mauro A. Enciso-Aguilar, Nicolas Zerounian

    Research output: Contribution to conferencePaper

    2 Scopus citations

    Abstract

    We present the results of intrinsic transit time separation of SiGe:C heterojunction bipolar transistors (HBT). This is performed using a reliable technique based on hydrodynamic modeling. These results are compared to the extraction of the noise transport time. This last parameter is found to be equal to the sum of the base transit time (τB) and of the collector transit time (τC), this result agrees with the findings reported in the literature. This strategy of transit time extraction may help to quantify the influence of base doping, Ge content and temperature on HBT performances. © 2012 European Microwave Assoc.
    Original languageAmerican English
    Pages175-178
    Number of pages157
    StatePublished - 1 Dec 2012
    EventEuropean Microwave Week 2012: "Space for Microwaves", EuMW 2012, Conference Proceedings - 7th European Microwave Integrated Circuits Conference, EuMIC 2012 -
    Duration: 1 Dec 2012 → …

    Conference

    ConferenceEuropean Microwave Week 2012: "Space for Microwaves", EuMW 2012, Conference Proceedings - 7th European Microwave Integrated Circuits Conference, EuMIC 2012
    Period1/12/12 → …

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  • Cite this

    Aniel, F., & Zerounian, N. (2012). Intrinsic transit times and noise transport time study of Si/SiGe:C Heterejunction bipolar transistors. 175-178. Paper presented at European Microwave Week 2012: "Space for Microwaves", EuMW 2012, Conference Proceedings - 7th European Microwave Integrated Circuits Conference, EuMIC 2012, .