TY - JOUR
T1 - Influence of the thiourea/CdCl2 concentration ratio used for the chemical bath deposition of CdS thin films, upon the CdS/CdTe interface recombination velocity in CdTe/CdS/glass structures.
AU - Marín, E.
AU - Santoyo, J.
AU - Calderón, A.
AU - Vigil-Galán, O.
AU - Contreras-Puente, G.
N1 - Funding Information:
This work was supported by projects SIP-IPN Grant Nos. 20080032 and 20090160 and CONACyT Grant No. 83289. The authors also thank the support from COFAA-IPN through the PIFI and SIBE Programs.
PY - 2010/6/15
Y1 - 2010/6/15
N2 - In this work we study the influence of the thiourea/CdCl2 concentration ratio used for the chemical bath deposition of CdS thin films on glass substrates, upon the CdS/CdTe interface recombination velocity in CdTe/CdS/glass structures, where the CdTe layer was grown on the CdS thin film by close space vapor deposition (CSVT)-hot wall technique. The interface recombination velocity was measured by means of the photoacoustic (PA) technique in a heat transmission configuration, in which minority carriers are photoexcited at the CdTe layer after illumination through the substrate and the CdS thin film. For data processing, a theoretical model was developed for the generation of the PA signal. We show a reduction in the value of the recombination velocity respecting those obtained for samples where CdS was grown by CSVT, and we observe that a minimal value appears for a thiourea/CdCl 2 ratio in the CdS deposition solution equal to 5. These results show a good correlation with those of electrical measurements performed in solar cell devices.
AB - In this work we study the influence of the thiourea/CdCl2 concentration ratio used for the chemical bath deposition of CdS thin films on glass substrates, upon the CdS/CdTe interface recombination velocity in CdTe/CdS/glass structures, where the CdTe layer was grown on the CdS thin film by close space vapor deposition (CSVT)-hot wall technique. The interface recombination velocity was measured by means of the photoacoustic (PA) technique in a heat transmission configuration, in which minority carriers are photoexcited at the CdTe layer after illumination through the substrate and the CdS thin film. For data processing, a theoretical model was developed for the generation of the PA signal. We show a reduction in the value of the recombination velocity respecting those obtained for samples where CdS was grown by CSVT, and we observe that a minimal value appears for a thiourea/CdCl 2 ratio in the CdS deposition solution equal to 5. These results show a good correlation with those of electrical measurements performed in solar cell devices.
UR - http://www.scopus.com/inward/record.url?scp=77954202111&partnerID=8YFLogxK
U2 - 10.1063/1.3431534
DO - 10.1063/1.3431534
M3 - Artículo
SN - 0021-8979
VL - 107
JO - Journal of Applied Physics
JF - Journal of Applied Physics
IS - 12
M1 - 123701
ER -