Impact of active layer thickness in thin-film transistors based on Zinc Oxide by ultrasonic spray pyrolysis

Miguel A. Dominguez, Francisco Flores, Adan Luna, Javier Martinez, Jose A. Luna-Lopez, Salvador Alcantara, Pedro Rosales, Claudia Reyes, Abdu Orduña

Research output: Contribution to journalArticlepeer-review

19 Scopus citations

Abstract

Abstract In this work, the preparation of Zinc Oxide (ZnO) films by ultrasonic spray pyrolysis at low-temperature and its application in thin-film transistors (TFTs) are presented, as well, the impact of the active layer thickness and gate dielectric thickness in the electrical performance of the ZnO TFTs. A thinner active layer resulted in better transfer characteristics such as higher on/off-current ratio, while a thicker active layer resulted in better output characteristics. The ZnO films were deposited from 0.2 M precursor solution of Zinc acetate in methanol, using air as carrier gas on a hotplate at 200 C. The ZnO films obtained at 200 C were characterized by optical transmittance, Photoluminescence spectroscopy and X-ray diffraction.

Original languageEnglish
Article number6771
Pages (from-to)33-36
Number of pages4
JournalSolid-State Electronics
Volume109
DOIs
StatePublished - Jul 2015

Keywords

  • Spray pyrolysis
  • Thin film transistors
  • ZnO

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