Impact of active layer thickness in thin-film transistors based on Zinc Oxide by ultrasonic spray pyrolysis

Miguel A. Dominguez; Francisco Flores; Adan Luna; Javier Martinez; Jose A. Luna-Lopez; Salvador Alcantara; Pedro Rosales; Claudia Reyes; Abdu Orduña

doi:10.1016/j.sse.2015.03.012

Impact of active layer thickness in thin-film transistors based on Zinc Oxide by ultrasonic spray pyrolysis

Miguel A. Dominguez, Francisco Flores, Adan Luna, Javier Martinez, Jose A. Luna-Lopez, Salvador Alcantara, Pedro Rosales, Claudia Reyes, Abdu Orduña

Centro de Investigación en Biotecnología Aplicada (CIBA), Unidad Tlaxcala

Research output: Contribution to journal › Article › peer-review

22 Scopus citations

Abstract

Abstract In this work, the preparation of Zinc Oxide (ZnO) films by ultrasonic spray pyrolysis at low-temperature and its application in thin-film transistors (TFTs) are presented, as well, the impact of the active layer thickness and gate dielectric thickness in the electrical performance of the ZnO TFTs. A thinner active layer resulted in better transfer characteristics such as higher on/off-current ratio, while a thicker active layer resulted in better output characteristics. The ZnO films were deposited from 0.2 M precursor solution of Zinc acetate in methanol, using air as carrier gas on a hotplate at 200 C. The ZnO films obtained at 200 C were characterized by optical transmittance, Photoluminescence spectroscopy and X-ray diffraction.

Original language	English
Article number	6771
Pages (from-to)	33-36
Number of pages	4
Journal	Solid-State Electronics
Volume	109
DOIs	https://doi.org/10.1016/j.sse.2015.03.012
State	Published - Jul 2015

Keywords

Spray pyrolysis
Thin film transistors
ZnO

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10.1016/j.sse.2015.03.012

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title = "Impact of active layer thickness in thin-film transistors based on Zinc Oxide by ultrasonic spray pyrolysis",

abstract = "Abstract In this work, the preparation of Zinc Oxide (ZnO) films by ultrasonic spray pyrolysis at low-temperature and its application in thin-film transistors (TFTs) are presented, as well, the impact of the active layer thickness and gate dielectric thickness in the electrical performance of the ZnO TFTs. A thinner active layer resulted in better transfer characteristics such as higher on/off-current ratio, while a thicker active layer resulted in better output characteristics. The ZnO films were deposited from 0.2 M precursor solution of Zinc acetate in methanol, using air as carrier gas on a hotplate at 200 C. The ZnO films obtained at 200 C were characterized by optical transmittance, Photoluminescence spectroscopy and X-ray diffraction.",

keywords = "Spray pyrolysis, Thin film transistors, ZnO",

author = "Dominguez, {Miguel A.} and Francisco Flores and Adan Luna and Javier Martinez and Luna-Lopez, {Jose A.} and Salvador Alcantara and Pedro Rosales and Claudia Reyes and Abdu Ordu{\~n}a",

year = "2015",

month = jul,

doi = "10.1016/j.sse.2015.03.012",

language = "Ingl{\'e}s",

volume = "109",

pages = "33--36",

journal = "Solid-State Electronics",

issn = "0038-1101",

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TY - JOUR

T1 - Impact of active layer thickness in thin-film transistors based on Zinc Oxide by ultrasonic spray pyrolysis

AU - Dominguez, Miguel A.

AU - Flores, Francisco

AU - Luna, Adan

AU - Martinez, Javier

AU - Luna-Lopez, Jose A.

AU - Alcantara, Salvador

AU - Rosales, Pedro

AU - Reyes, Claudia

AU - Orduña, Abdu

PY - 2015/7

Y1 - 2015/7

N2 - Abstract In this work, the preparation of Zinc Oxide (ZnO) films by ultrasonic spray pyrolysis at low-temperature and its application in thin-film transistors (TFTs) are presented, as well, the impact of the active layer thickness and gate dielectric thickness in the electrical performance of the ZnO TFTs. A thinner active layer resulted in better transfer characteristics such as higher on/off-current ratio, while a thicker active layer resulted in better output characteristics. The ZnO films were deposited from 0.2 M precursor solution of Zinc acetate in methanol, using air as carrier gas on a hotplate at 200 C. The ZnO films obtained at 200 C were characterized by optical transmittance, Photoluminescence spectroscopy and X-ray diffraction.

AB - Abstract In this work, the preparation of Zinc Oxide (ZnO) films by ultrasonic spray pyrolysis at low-temperature and its application in thin-film transistors (TFTs) are presented, as well, the impact of the active layer thickness and gate dielectric thickness in the electrical performance of the ZnO TFTs. A thinner active layer resulted in better transfer characteristics such as higher on/off-current ratio, while a thicker active layer resulted in better output characteristics. The ZnO films were deposited from 0.2 M precursor solution of Zinc acetate in methanol, using air as carrier gas on a hotplate at 200 C. The ZnO films obtained at 200 C were characterized by optical transmittance, Photoluminescence spectroscopy and X-ray diffraction.

KW - Spray pyrolysis

KW - Thin film transistors

KW - ZnO

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U2 - 10.1016/j.sse.2015.03.012

DO - 10.1016/j.sse.2015.03.012

M3 - Artículo

SN - 0038-1101

VL - 109

SP - 33

EP - 36

JO - Solid-State Electronics

JF - Solid-State Electronics

M1 - 6771

ER -

Impact of active layer thickness in thin-film transistors based on Zinc Oxide by ultrasonic spray pyrolysis

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Keywords

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