I-V characteristics of a-Si-c-Si hetero-junction diodes made by hot wire CVD

Norberto Hernández-Como, Arturo Morales-Acevedo, Y. Matsumoto

Research output: Contribution to journalArticleResearchpeer-review

12 Citations (Scopus)

Abstract

p-Type hydrogenated amorphous silicon (a-Si:H) was deposited on n-type crystalline silicon (c-Si) substrates to obtain hetero-junction diodes. Additionally, a thin intrinsic a-Si:H layer was inserted between both the p-type film and the n-type substrate to study its passivation effect on the c-Si surface. The amorphous films were obtained by the hot wire chemical vapor deposition (HWCVD) technique, using a tungsten filament and silane (SiH 4), hydrogen (H2) and diborane (B2H 6) gases, where the deposition parameters such as gas flow, substrate temperature and filament temperature were varied. Optical band gap, deposition rate and conductivity were measured for all the films. We studied the influence of the quality of the amorphous films upon the performance of the hetero-junction diodes. In particular, the diode ideality factor (n) and the saturation current density (J0) were determined by measuring the currentvoltage characteristics in dark conditions. It is shown that the presence of the intrinsic layer is fundamental for making good diodes, since devices made without this film cause the diodes to have high saturation current density and ideality factor (J0>10×10-6 A/cm2, n>4) as compared to diodes with a good intrinsic layer (J 0=5×10-9 A/cm2, n=1.39). The results obtained are encouraging, but the quality of the intrinsic films still should be improved for applying them to HIT solar cells. © 2010 Elsevier B.V.
Original languageAmerican English
Pages (from-to)1996-2000
Number of pages1795
JournalSolar Energy Materials and Solar Cells
DOIs
StatePublished - 1 Aug 2011
Externally publishedYes

Fingerprint

Silicon
Chemical vapor deposition
Diodes
Wire
Crystalline materials
Gases
Silanes
Tungsten
Temperature
Amorphous films
Hydrogen
Current density
Substrates
Equipment and Supplies
Optical band gaps
Deposition rates
Amorphous silicon
Passivation
Flow of gases
Solar cells

Cite this

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abstract = "p-Type hydrogenated amorphous silicon (a-Si:H) was deposited on n-type crystalline silicon (c-Si) substrates to obtain hetero-junction diodes. Additionally, a thin intrinsic a-Si:H layer was inserted between both the p-type film and the n-type substrate to study its passivation effect on the c-Si surface. The amorphous films were obtained by the hot wire chemical vapor deposition (HWCVD) technique, using a tungsten filament and silane (SiH 4), hydrogen (H2) and diborane (B2H 6) gases, where the deposition parameters such as gas flow, substrate temperature and filament temperature were varied. Optical band gap, deposition rate and conductivity were measured for all the films. We studied the influence of the quality of the amorphous films upon the performance of the hetero-junction diodes. In particular, the diode ideality factor (n) and the saturation current density (J0) were determined by measuring the currentvoltage characteristics in dark conditions. It is shown that the presence of the intrinsic layer is fundamental for making good diodes, since devices made without this film cause the diodes to have high saturation current density and ideality factor (J0>10×10-6 A/cm2, n>4) as compared to diodes with a good intrinsic layer (J 0=5×10-9 A/cm2, n=1.39). The results obtained are encouraging, but the quality of the intrinsic films still should be improved for applying them to HIT solar cells. {\circledC} 2010 Elsevier B.V.",
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I-V characteristics of a-Si-c-Si hetero-junction diodes made by hot wire CVD. / Hernández-Como, Norberto; Morales-Acevedo, Arturo; Matsumoto, Y.

In: Solar Energy Materials and Solar Cells, 01.08.2011, p. 1996-2000.

Research output: Contribution to journalArticleResearchpeer-review

TY - JOUR

T1 - I-V characteristics of a-Si-c-Si hetero-junction diodes made by hot wire CVD

AU - Hernández-Como, Norberto

AU - Morales-Acevedo, Arturo

AU - Matsumoto, Y.

PY - 2011/8/1

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N2 - p-Type hydrogenated amorphous silicon (a-Si:H) was deposited on n-type crystalline silicon (c-Si) substrates to obtain hetero-junction diodes. Additionally, a thin intrinsic a-Si:H layer was inserted between both the p-type film and the n-type substrate to study its passivation effect on the c-Si surface. The amorphous films were obtained by the hot wire chemical vapor deposition (HWCVD) technique, using a tungsten filament and silane (SiH 4), hydrogen (H2) and diborane (B2H 6) gases, where the deposition parameters such as gas flow, substrate temperature and filament temperature were varied. Optical band gap, deposition rate and conductivity were measured for all the films. We studied the influence of the quality of the amorphous films upon the performance of the hetero-junction diodes. In particular, the diode ideality factor (n) and the saturation current density (J0) were determined by measuring the currentvoltage characteristics in dark conditions. It is shown that the presence of the intrinsic layer is fundamental for making good diodes, since devices made without this film cause the diodes to have high saturation current density and ideality factor (J0>10×10-6 A/cm2, n>4) as compared to diodes with a good intrinsic layer (J 0=5×10-9 A/cm2, n=1.39). The results obtained are encouraging, but the quality of the intrinsic films still should be improved for applying them to HIT solar cells. © 2010 Elsevier B.V.

AB - p-Type hydrogenated amorphous silicon (a-Si:H) was deposited on n-type crystalline silicon (c-Si) substrates to obtain hetero-junction diodes. Additionally, a thin intrinsic a-Si:H layer was inserted between both the p-type film and the n-type substrate to study its passivation effect on the c-Si surface. The amorphous films were obtained by the hot wire chemical vapor deposition (HWCVD) technique, using a tungsten filament and silane (SiH 4), hydrogen (H2) and diborane (B2H 6) gases, where the deposition parameters such as gas flow, substrate temperature and filament temperature were varied. Optical band gap, deposition rate and conductivity were measured for all the films. We studied the influence of the quality of the amorphous films upon the performance of the hetero-junction diodes. In particular, the diode ideality factor (n) and the saturation current density (J0) were determined by measuring the currentvoltage characteristics in dark conditions. It is shown that the presence of the intrinsic layer is fundamental for making good diodes, since devices made without this film cause the diodes to have high saturation current density and ideality factor (J0>10×10-6 A/cm2, n>4) as compared to diodes with a good intrinsic layer (J 0=5×10-9 A/cm2, n=1.39). The results obtained are encouraging, but the quality of the intrinsic films still should be improved for applying them to HIT solar cells. © 2010 Elsevier B.V.

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