Hot carriers and excitation of Si/SiOx interface defect photoluminescence in Si nanocrystallites

T. V. Torchynska, A. Diaz Cano, M. Morales Rodriguez, L. Yu Khomenkova

Research output: Contribution to journalConference articlepeer-review

33 Scopus citations

Abstract

In low-dimensional silicon wires and dots, as supposed earlier (Phys. Rev. B 65 (2002) 115313), hot carrier ballistic transport towards the Si/SiO x interface can enhance the excitation of oxide defect-related photoluminescence (PL) bands. This article presents new experimental results supporting the role of ballistic transport in bright visible photoluminescence of silicon nano-crystallites. The intensity dependences of the "red" and "orange" photoluminescence bands on excitation light wavelengths, diameters of Si nano-crystallites and surface area of porous layers have been analysed. The models of optical transitions at the excitation of both PL bands are discussed as well.

Translated title of the contributionPortadores calientes y excitación de la fotoluminiscencia del defecto de interfaz Si/SiO x en nanocristalitos de Si
Original languageEnglish
Pages (from-to)1113-1118
Number of pages6
JournalPhysica B: Condensed Matter
Volume340-342
DOIs
StatePublished - 31 Dec 2003
EventProceedings of the 22nd International Conference on Defects in (ICDS-22) - Aarhus, Denmark
Duration: 28 Jul 20031 Aug 2003

Keywords

  • Hot carrier ballistic transport
  • Photoluminescence
  • Porous silicon

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