Abstract
In low-dimensional silicon wires and dots, as supposed earlier (Phys. Rev. B 65 (2002) 115313), hot carrier ballistic transport towards the Si/SiO x interface can enhance the excitation of oxide defect-related photoluminescence (PL) bands. This article presents new experimental results supporting the role of ballistic transport in bright visible photoluminescence of silicon nano-crystallites. The intensity dependences of the "red" and "orange" photoluminescence bands on excitation light wavelengths, diameters of Si nano-crystallites and surface area of porous layers have been analysed. The models of optical transitions at the excitation of both PL bands are discussed as well.
Translated title of the contribution | Portadores calientes y excitación de la fotoluminiscencia del defecto de interfaz Si/SiO x en nanocristalitos de Si |
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Original language | English |
Pages (from-to) | 1113-1118 |
Number of pages | 6 |
Journal | Physica B: Condensed Matter |
Volume | 340-342 |
DOIs | |
State | Published - 31 Dec 2003 |
Event | Proceedings of the 22nd International Conference on Defects in (ICDS-22) - Aarhus, Denmark Duration: 28 Jul 2003 → 1 Aug 2003 |
Keywords
- Hot carrier ballistic transport
- Photoluminescence
- Porous silicon