High performance 100 nm T-gate strained Si/Si<inf>0.6</inf>Ge<inf>0.4</inf>n-MODFET

F. Aniel, M. Enciso-Aguilar, L. Giguerre, P. Crozat, R. Adde, T. Mack, U. Seiler, Th Hackbarth, B. Raynor

Research output: Contribution to conferencePaper

3 Citations (Scopus)

Abstract

© 2001 ISDRS-Univ of Maryland. 100 nm T-gate Si/SiGe n-MODFETs are reported with new record fTof 76 GHz (105 GHz), and with fMAXof 107 GHz (170 GHz) at temperatures 300 K (50 K), low noise figure NFminof 0.4 dB at 2.5 GHz and 300 K. Dependence on biases and temperature of HF performances and main parameters are presented. Experimental results are compared with data from physical simulations at short gate lengths to analyze carrier transport and device optimization.
Original languageAmerican English
Pages482-485
Number of pages433
DOIs
StatePublished - 1 Jan 2001
Externally publishedYes
Event2001 International Semiconductor Device Research Symposium, ISDRS 2001 - Proceedings -
Duration: 1 Jan 2001 → …

Conference

Conference2001 International Semiconductor Device Research Symposium, ISDRS 2001 - Proceedings
Period1/01/01 → …

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High electron mobility transistors
Carrier transport
Noise figure
new record
temperature
Temperature
simulation
parameter

Cite this

Aniel, F., Enciso-Aguilar, M., Giguerre, L., Crozat, P., Adde, R., Mack, T., ... Raynor, B. (2001). High performance 100 nm T-gate strained Si/Si<inf>0.6</inf>Ge<inf>0.4</inf>n-MODFET. 482-485. Paper presented at 2001 International Semiconductor Device Research Symposium, ISDRS 2001 - Proceedings, . https://doi.org/10.1109/ISDRS.2001.984551
Aniel, F. ; Enciso-Aguilar, M. ; Giguerre, L. ; Crozat, P. ; Adde, R. ; Mack, T. ; Seiler, U. ; Hackbarth, Th ; Raynor, B. / High performance 100 nm T-gate strained Si/Si<inf>0.6</inf>Ge<inf>0.4</inf>n-MODFET. Paper presented at 2001 International Semiconductor Device Research Symposium, ISDRS 2001 - Proceedings, .433 p.
@conference{025be3412707449596faaba96a3b0bed,
title = "High performance 100 nm T-gate strained Si/Si0.6Ge0.4n-MODFET",
abstract = "{\circledC} 2001 ISDRS-Univ of Maryland. 100 nm T-gate Si/SiGe n-MODFETs are reported with new record fTof 76 GHz (105 GHz), and with fMAXof 107 GHz (170 GHz) at temperatures 300 K (50 K), low noise figure NFminof 0.4 dB at 2.5 GHz and 300 K. Dependence on biases and temperature of HF performances and main parameters are presented. Experimental results are compared with data from physical simulations at short gate lengths to analyze carrier transport and device optimization.",
author = "F. Aniel and M. Enciso-Aguilar and L. Giguerre and P. Crozat and R. Adde and T. Mack and U. Seiler and Th Hackbarth and B. Raynor",
year = "2001",
month = "1",
day = "1",
doi = "10.1109/ISDRS.2001.984551",
language = "American English",
pages = "482--485",
note = "2001 International Semiconductor Device Research Symposium, ISDRS 2001 - Proceedings ; Conference date: 01-01-2001",

}

Aniel, F, Enciso-Aguilar, M, Giguerre, L, Crozat, P, Adde, R, Mack, T, Seiler, U, Hackbarth, T & Raynor, B 2001, 'High performance 100 nm T-gate strained Si/Si<inf>0.6</inf>Ge<inf>0.4</inf>n-MODFET', Paper presented at 2001 International Semiconductor Device Research Symposium, ISDRS 2001 - Proceedings, 1/01/01 pp. 482-485. https://doi.org/10.1109/ISDRS.2001.984551

High performance 100 nm T-gate strained Si/Si<inf>0.6</inf>Ge<inf>0.4</inf>n-MODFET. / Aniel, F.; Enciso-Aguilar, M.; Giguerre, L.; Crozat, P.; Adde, R.; Mack, T.; Seiler, U.; Hackbarth, Th; Raynor, B.

2001. 482-485 Paper presented at 2001 International Semiconductor Device Research Symposium, ISDRS 2001 - Proceedings, .

Research output: Contribution to conferencePaper

TY - CONF

T1 - High performance 100 nm T-gate strained Si/Si0.6Ge0.4n-MODFET

AU - Aniel, F.

AU - Enciso-Aguilar, M.

AU - Giguerre, L.

AU - Crozat, P.

AU - Adde, R.

AU - Mack, T.

AU - Seiler, U.

AU - Hackbarth, Th

AU - Raynor, B.

PY - 2001/1/1

Y1 - 2001/1/1

N2 - © 2001 ISDRS-Univ of Maryland. 100 nm T-gate Si/SiGe n-MODFETs are reported with new record fTof 76 GHz (105 GHz), and with fMAXof 107 GHz (170 GHz) at temperatures 300 K (50 K), low noise figure NFminof 0.4 dB at 2.5 GHz and 300 K. Dependence on biases and temperature of HF performances and main parameters are presented. Experimental results are compared with data from physical simulations at short gate lengths to analyze carrier transport and device optimization.

AB - © 2001 ISDRS-Univ of Maryland. 100 nm T-gate Si/SiGe n-MODFETs are reported with new record fTof 76 GHz (105 GHz), and with fMAXof 107 GHz (170 GHz) at temperatures 300 K (50 K), low noise figure NFminof 0.4 dB at 2.5 GHz and 300 K. Dependence on biases and temperature of HF performances and main parameters are presented. Experimental results are compared with data from physical simulations at short gate lengths to analyze carrier transport and device optimization.

UR - https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=0012746304&origin=inward

UR - https://www.scopus.com/inward/citedby.uri?partnerID=HzOxMe3b&scp=0012746304&origin=inward

U2 - 10.1109/ISDRS.2001.984551

DO - 10.1109/ISDRS.2001.984551

M3 - Paper

SP - 482

EP - 485

ER -

Aniel F, Enciso-Aguilar M, Giguerre L, Crozat P, Adde R, Mack T et al. High performance 100 nm T-gate strained Si/Si<inf>0.6</inf>Ge<inf>0.4</inf>n-MODFET. 2001. Paper presented at 2001 International Semiconductor Device Research Symposium, ISDRS 2001 - Proceedings, . https://doi.org/10.1109/ISDRS.2001.984551