High performance 100 nm T-gate strained Si/Si0.6Ge0.4 n-MODFET

F. Aniel; M. Enciso-Aguilar; L. Giguerre; P. Crozat; R. Adde; T. Mack; U. Seiler; Th Hackbarth; B. Raynor

doi:10.1109/ISDRS.2001.984551

High performance 100 nm T-gate strained Si/Si_0.6Ge_0.4 n-MODFET

F. Aniel, M. Enciso-Aguilar, L. Giguerre, P. Crozat, R. Adde, T. Mack, U. Seiler, Th Hackbarth, B. Raynor

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

3 Scopus citations

Abstract

100 nm T-gate Si/SiGe n-MODFETs are reported with new record f_T of 76 GHz (105 GHz), and with f_MAX of 107 GHz (170 GHz) at temperatures 300 K (50 K), low noise figure NF_min of 0.4 dB at 2.5 GHz and 300 K. Dependence on biases and temperature of HF performances and main parameters are presented. Experimental results are compared with data from physical simulations at short gate lengths to analyze carrier transport and device optimization.

Original language	English
Title of host publication	2001 International Semiconductor Device Research Symposium, ISDRS 2001 - Proceedings
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	482-485
Number of pages	4
ISBN (Electronic)	0780374320, 9780780374324
DOIs	https://doi.org/10.1109/ISDRS.2001.984551
State	Published - 2001
Externally published	Yes
Event	International Semiconductor Device Research Symposium, ISDRS 2001 - Washington, United States Duration: 5 Dec 2001 → 7 Dec 2001

Publication series

Name	2001 International Semiconductor Device Research Symposium, ISDRS 2001 - Proceedings

Conference

Conference	International Semiconductor Device Research Symposium, ISDRS 2001
Country/Territory	United States
City	Washington
Period	5/12/01 → 7/12/01

Access to Document

10.1109/ISDRS.2001.984551

Cite this

Aniel, F., Enciso-Aguilar, M., Giguerre, L., Crozat, P., Adde, R., Mack, T., Seiler, U., Hackbarth, T., & Raynor, B. (2001). High performance 100 nm T-gate strained Si/Si_0.6Ge_0.4 n-MODFET. In 2001 International Semiconductor Device Research Symposium, ISDRS 2001 - Proceedings (pp. 482-485). Article 984551 (2001 International Semiconductor Device Research Symposium, ISDRS 2001 - Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISDRS.2001.984551

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title = "High performance 100 nm T-gate strained Si/Si0.6Ge0.4 n-MODFET",

abstract = "100 nm T-gate Si/SiGe n-MODFETs are reported with new record fT of 76 GHz (105 GHz), and with fMAX of 107 GHz (170 GHz) at temperatures 300 K (50 K), low noise figure NFmin of 0.4 dB at 2.5 GHz and 300 K. Dependence on biases and temperature of HF performances and main parameters are presented. Experimental results are compared with data from physical simulations at short gate lengths to analyze carrier transport and device optimization.",

author = "F. Aniel and M. Enciso-Aguilar and L. Giguerre and P. Crozat and R. Adde and T. Mack and U. Seiler and Th Hackbarth and B. Raynor",

note = "Publisher Copyright: {\textcopyright} 2001 ISDRS-Univ of Maryland.; International Semiconductor Device Research Symposium, ISDRS 2001 ; Conference date: 05-12-2001 Through 07-12-2001",

year = "2001",

doi = "10.1109/ISDRS.2001.984551",

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series = "2001 International Semiconductor Device Research Symposium, ISDRS 2001 - Proceedings",

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Aniel, F, Enciso-Aguilar, M, Giguerre, L, Crozat, P, Adde, R, Mack, T, Seiler, U, Hackbarth, T & Raynor, B 2001, High performance 100 nm T-gate strained Si/Si_0.6Ge_0.4 n-MODFET. in 2001 International Semiconductor Device Research Symposium, ISDRS 2001 - Proceedings., 984551, 2001 International Semiconductor Device Research Symposium, ISDRS 2001 - Proceedings, Institute of Electrical and Electronics Engineers Inc., pp. 482-485, International Semiconductor Device Research Symposium, ISDRS 2001, Washington, United States, 5/12/01. https://doi.org/10.1109/ISDRS.2001.984551

High performance 100 nm T-gate strained Si/Si_0.6Ge_0.4 n-MODFET. / Aniel, F.; Enciso-Aguilar, M.; Giguerre, L. et al.
2001 International Semiconductor Device Research Symposium, ISDRS 2001 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2001. p. 482-485 984551 (2001 International Semiconductor Device Research Symposium, ISDRS 2001 - Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Aniel, F.

AU - Enciso-Aguilar, M.

AU - Giguerre, L.

AU - Crozat, P.

AU - Adde, R.

AU - Mack, T.

AU - Seiler, U.

AU - Hackbarth, Th

AU - Raynor, B.

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N2 - 100 nm T-gate Si/SiGe n-MODFETs are reported with new record fT of 76 GHz (105 GHz), and with fMAX of 107 GHz (170 GHz) at temperatures 300 K (50 K), low noise figure NFmin of 0.4 dB at 2.5 GHz and 300 K. Dependence on biases and temperature of HF performances and main parameters are presented. Experimental results are compared with data from physical simulations at short gate lengths to analyze carrier transport and device optimization.

AB - 100 nm T-gate Si/SiGe n-MODFETs are reported with new record fT of 76 GHz (105 GHz), and with fMAX of 107 GHz (170 GHz) at temperatures 300 K (50 K), low noise figure NFmin of 0.4 dB at 2.5 GHz and 300 K. Dependence on biases and temperature of HF performances and main parameters are presented. Experimental results are compared with data from physical simulations at short gate lengths to analyze carrier transport and device optimization.

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Aniel F, Enciso-Aguilar M, Giguerre L, Crozat P, Adde R, Mack T et al. High performance 100 nm T-gate strained Si/Si_0.6Ge_0.4 n-MODFET. In 2001 International Semiconductor Device Research Symposium, ISDRS 2001 - Proceedings. Institute of Electrical and Electronics Engineers Inc. 2001. p. 482-485. 984551. (2001 International Semiconductor Device Research Symposium, ISDRS 2001 - Proceedings). doi: 10.1109/ISDRS.2001.984551