TY - JOUR
T1 - High-Frequency Performance Study of CNTFET-Based Amplifiers
AU - Ramos-Silva, Javier N.
AU - Pacheco-Sanchez, Anibal
AU - Diaz-Albarran, Luis M.
AU - Rodriguez-Mendez, Luis M.
AU - Enciso-Aguilar, Mauro A.
AU - Schroter, Michael
AU - Ramirez-Garcia, Eloy
N1 - Publisher Copyright:
© 2002-2012 IEEE.
PY - 2020
Y1 - 2020
N2 - This article details the design of single-and double-stage maximum gain and low-noise high-frequency amplifiers at 2.4 GHz using a compact carbon nanotube field-effect transistor model, which is initially calibrated with hysteresis-free experimental data from a technology suitable for high-frequency applications. Parameters of the compact model represent CNTFETs with maximum high-frequency gain and reduced high-frequency noise by eliminating the metallic tubes contribution. Studies on linearity of the amplifiers as well as the impact of the quality factor of the inductors used in the stabilization network and the density of the nanotubes on amplifier performance are presented. Results of RF amplifiers show that CNTFETs are credible contenders for developing applications in S-band because of their gain (around 12 dB for a double-stage gain design), low noise (NFmin = 1.5 dB for a single-stage LNA) and linearity performance (OIP3 around 15 dBm for a single-stage gain amplifier design).
AB - This article details the design of single-and double-stage maximum gain and low-noise high-frequency amplifiers at 2.4 GHz using a compact carbon nanotube field-effect transistor model, which is initially calibrated with hysteresis-free experimental data from a technology suitable for high-frequency applications. Parameters of the compact model represent CNTFETs with maximum high-frequency gain and reduced high-frequency noise by eliminating the metallic tubes contribution. Studies on linearity of the amplifiers as well as the impact of the quality factor of the inductors used in the stabilization network and the density of the nanotubes on amplifier performance are presented. Results of RF amplifiers show that CNTFETs are credible contenders for developing applications in S-band because of their gain (around 12 dB for a double-stage gain design), low noise (NFmin = 1.5 dB for a single-stage LNA) and linearity performance (OIP3 around 15 dBm for a single-stage gain amplifier design).
KW - CNTFET
KW - LNA
KW - RF amplifier
KW - compact model
KW - gain amplifier
KW - linearity
UR - http://www.scopus.com/inward/record.url?scp=85083563269&partnerID=8YFLogxK
U2 - 10.1109/TNANO.2020.2978816
DO - 10.1109/TNANO.2020.2978816
M3 - Artículo
AN - SCOPUS:85083563269
SN - 1536-125X
VL - 19
SP - 284
EP - 291
JO - IEEE Transactions on Nanotechnology
JF - IEEE Transactions on Nanotechnology
M1 - 9032364
ER -