We report on the growth and characterization of self-assembled InGaN columnar nanostructures grown by gas source molecular beam epitaxy (GSMBE) on Si(111) substrates. At a zero concentration of Ga, InN nanocolumns (NCs) were successfully grown. In the case of InGaN, the surface morphology is dependent on composition; however, in general, InGaN samples exhibit columnar features. At concentrations near 50%, the samples show phase separation; this result is explained in terms of solid phase immiscibility. © 2012 American Institute of Physics.
Pérez-Caro, M., Ramírez-López, M., Rojas-Ramírez, J. S., Martínez-Velis, I., Casallas-Moreno, Y., Gallardo-Hernández, S., Babu, B. J., Velumani, S., & López-López, M. (2012). Group III-nitrides nanostructures. 164-168. Paper presented at AIP Conference Proceedings, . https://doi.org/10.1063/1.3678628