Group III-nitrides nanostructures

M. Pérez-Caro, M. Ramírez-López, J. S. Rojas-Ramírez, I. Martínez-Velis, Y. Casallas-Moreno, S. Gallardo-Hernández, B. J. Babu, S. Velumani, M. López-López

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

We report on the growth and characterization of self-assembled InGaN columnar nanostructures grown by gas source molecular beam epitaxy (GSMBE) on Si(111) substrates. At a zero concentration of Ga, InN nanocolumns (NCs) were successfully grown. In the case of InGaN, the surface morphology is dependent on composition; however, in general, InGaN samples exhibit columnar features. At concentrations near 50%, the samples show phase separation; this result is explained in terms of solid phase immiscibility.

Original languageEnglish
Title of host publicationAdvanced Summer School in Physics 2011, EAV2011
Pages164-168
Number of pages5
DOIs
StatePublished - 2012
Externally publishedYes
EventAdvanced Summer School in Physics 2011, EAV2011 - Mexico City, Mexico
Duration: 25 Jul 201129 Jul 2011

Publication series

NameAIP Conference Proceedings
Volume1420
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Conference

ConferenceAdvanced Summer School in Physics 2011, EAV2011
Country/TerritoryMexico
CityMexico City
Period25/07/1129/07/11

Keywords

  • Molecular Beam Epitaxy
  • Nanocolumns
  • Nitrides

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