Group III-nitrides nanostructures

M. Pérez-Caro, M. Ramírez-López, J. S. Rojas-Ramírez, I. Martínez-Velis, Y. Casallas-Moreno, S. Gallardo-Hernández, B. J. Babu, S. Velumani, M. López-López

Research output: Contribution to conferencePaper

Abstract

We report on the growth and characterization of self-assembled InGaN columnar nanostructures grown by gas source molecular beam epitaxy (GSMBE) on Si(111) substrates. At a zero concentration of Ga, InN nanocolumns (NCs) were successfully grown. In the case of InGaN, the surface morphology is dependent on composition; however, in general, InGaN samples exhibit columnar features. At concentrations near 50%, the samples show phase separation; this result is explained in terms of solid phase immiscibility. © 2012 American Institute of Physics.
Original languageAmerican English
Pages164-168
Number of pages147
DOIs
StatePublished - 3 Apr 2012
Externally publishedYes
EventAIP Conference Proceedings -
Duration: 14 Aug 2013 → …

Conference

ConferenceAIP Conference Proceedings
Period14/08/13 → …

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    Pérez-Caro, M., Ramírez-López, M., Rojas-Ramírez, J. S., Martínez-Velis, I., Casallas-Moreno, Y., Gallardo-Hernández, S., Babu, B. J., Velumani, S., & López-López, M. (2012). Group III-nitrides nanostructures. 164-168. Paper presented at AIP Conference Proceedings, . https://doi.org/10.1063/1.3678628