TY - JOUR
T1 - Fabrication of CdS/CdTe Heterostructures by Chemical Synthesis Using a p-Type CdTe Film Grown by Electrodeposition Employing EDTA as Strong Complexing Agent
AU - Arreguín-Campos, M.
AU - Gutiérrez Z-B, K.
AU - Quiñones-Galván, J. G.
AU - Santos-Cruz, J.
AU - Mayén-Hernández, S. A.
AU - Zelaya-Angel, O.
AU - Olvera, M. de la L.
AU - Contreras-Puente, G.
AU - de Moure-Flores, F.
N1 - Publisher Copyright:
© 2019, The Minerals, Metals & Materials Society.
PY - 2019/1/1
Y1 - 2019/1/1
N2 - CdS/CdTe heterostructures were fabricated by chemical techniques. CdS films were deposited by chemical bath deposition on soda-lime/SnO 2 :F substrates. CdS films were obtained varying the concentration of thiourea and the growth temperature. CdTe films were grown by electrodeposition on SnO 2 :F/CdS substrates at 80°C, using ethylenediaminetetraacetic acid (EDTA) as strong complexing agent. The cathodic potential was varied from − 0.70 V to − 1.20 V. Raman spectroscopy showed that for a potential of − 1.20 V a CdTe film with high crystalline quality was obtained. The electric characterization through J–V measurements, indicates the formation of a n-CdS/p-CdTe junction. These results showed that p-type CdTe films grown by electrodeposition technique using EDTA as strong complexing agent were obtained.
AB - CdS/CdTe heterostructures were fabricated by chemical techniques. CdS films were deposited by chemical bath deposition on soda-lime/SnO 2 :F substrates. CdS films were obtained varying the concentration of thiourea and the growth temperature. CdTe films were grown by electrodeposition on SnO 2 :F/CdS substrates at 80°C, using ethylenediaminetetraacetic acid (EDTA) as strong complexing agent. The cathodic potential was varied from − 0.70 V to − 1.20 V. Raman spectroscopy showed that for a potential of − 1.20 V a CdTe film with high crystalline quality was obtained. The electric characterization through J–V measurements, indicates the formation of a n-CdS/p-CdTe junction. These results showed that p-type CdTe films grown by electrodeposition technique using EDTA as strong complexing agent were obtained.
KW - CdS/CdTe heterostructures
KW - chemical synthesis
KW - electrodeposition
KW - p-type CdTe films
UR - http://www.scopus.com/inward/record.url?scp=85062954636&partnerID=8YFLogxK
U2 - 10.1007/s11664-019-07114-9
DO - 10.1007/s11664-019-07114-9
M3 - Artículo
SN - 0361-5235
JO - Journal of Electronic Materials
JF - Journal of Electronic Materials
ER -