TY - JOUR
T1 - Exciton thermal escape in symmetric InAs quantum dots in InGaAsZGaAs well structures
AU - Espinola, J. L.Casas
AU - Torchynska, T. V.
AU - Polupan, G.
AU - Sierra, R. Peña
PY - 2007
Y1 - 2007
N2 - The photo luminescence and its temperature dependence have been investigated for the ensembles of InAs quantum dots embedded in symmetric In0.15Ga0.85AsZGaAs quantum wells with different PL intensities. The solution of the set of rate equations for exciton dynamics was used to analyze the nature of thermal activation energies of the QD photoluminescence quenching. It is revealed two different stages of thermally activated quenching of the QD PL intensity caused by thermal escape of excitons from the In0.15Ga0.85As/GaAs QW into the GaAs barrier and from the QDs into the QWs with their subsequent nonradiative recombination. The variety of activation energies of PL thermal quenching is discussed as well.
AB - The photo luminescence and its temperature dependence have been investigated for the ensembles of InAs quantum dots embedded in symmetric In0.15Ga0.85AsZGaAs quantum wells with different PL intensities. The solution of the set of rate equations for exciton dynamics was used to analyze the nature of thermal activation energies of the QD photoluminescence quenching. It is revealed two different stages of thermally activated quenching of the QD PL intensity caused by thermal escape of excitons from the In0.15Ga0.85As/GaAs QW into the GaAs barrier and from the QDs into the QWs with their subsequent nonradiative recombination. The variety of activation energies of PL thermal quenching is discussed as well.
UR - http://www.scopus.com/inward/record.url?scp=50049089893&partnerID=8YFLogxK
U2 - 10.1002/pssc.200673338
DO - 10.1002/pssc.200673338
M3 - Artículo de la conferencia
AN - SCOPUS:50049089893
SN - 1862-6351
VL - 4
SP - 379
EP - 381
JO - Physica Status Solidi (C) Current Topics in Solid State Physics
JF - Physica Status Solidi (C) Current Topics in Solid State Physics
IS - 2
T2 - International Conference on Superlattices, Nano-structures and Nano-devices, ICSNN-2006
Y2 - 30 July 2006 through 4 August 2006
ER -