Abstract
The energy flux in bipolar semiconductors is investigated taking into account the influence of recombination on it. The general expression of an energy flux in a nondegenerate semiconductor is obtained in a linear approximation with respect to perturbation taking into account recombination (the presence of nonequilibrium charge carriers in the semiconductor) and thermal electrical currents of electrons and holes. The energy flux density has been calculated in two different cases, the case of weak recombination and the case of strong recombination, for a one-dimension case.
| Original language | English |
|---|---|
| Pages (from-to) | 430-434 |
| Number of pages | 5 |
| Journal | International Journal of Heat and Mass Transfer |
| Volume | 92 |
| DOIs | |
| State | Published - 1 Jan 2016 |
Keywords
- Effective thermal conductivity
- Energy flux
- Nonlinear temperature distribution
- Recombination
- Semiconductors