Abstract
SiNx films were grown by plasma-enhanced chemical vapor deposition on Si substrates with the composition controlled by the flow ratio R: ammonia to silane in the range R = 0.45-1.0. Then SiNx films were annealed at 1100 °C for 30 min to form Si-quantum dots (QDs). Fourier transform infrared spectroscopy study permits estimating SiNx compositions. Photoluminescence (PL) spectra of SiNx films included bands peaked at: 2.87-2.99, 2.42-2.54, 2.10-2.25, and 1.47-1.90 eV. Former three PL bands are attributed to emission via defects in SiNx films. Fourth PL band is assigned to exciton emission in Si QDs, detected by transmission electron microscopy study in films grown at R ≤ 0.67. The nature of non-radiative defects in SiNx films is discussed as well.
Original language | English |
---|---|
Pages (from-to) | 280-285 |
Number of pages | 6 |
Journal | MRS Communications |
Volume | 7 |
Issue number | 2 |
DOIs | |
State | Published - 1 Jun 2017 |