Emitting modification in Si-rich-SiNx films versus silicon nitride compositions

T. Torchynska, G. Polupan, L. Khomenkova, A. Slaoui

Research output: Contribution to journalArticlepeer-review

5 Scopus citations

Abstract

SiNx films were grown by plasma-enhanced chemical vapor deposition on Si substrates with the composition controlled by the flow ratio R: ammonia to silane in the range R = 0.45-1.0. Then SiNx films were annealed at 1100 °C for 30 min to form Si-quantum dots (QDs). Fourier transform infrared spectroscopy study permits estimating SiNx compositions. Photoluminescence (PL) spectra of SiNx films included bands peaked at: 2.87-2.99, 2.42-2.54, 2.10-2.25, and 1.47-1.90 eV. Former three PL bands are attributed to emission via defects in SiNx films. Fourth PL band is assigned to exciton emission in Si QDs, detected by transmission electron microscopy study in films grown at R ≤ 0.67. The nature of non-radiative defects in SiNx films is discussed as well.

Original languageEnglish
Pages (from-to)280-285
Number of pages6
JournalMRS Communications
Volume7
Issue number2
DOIs
StatePublished - 1 Jun 2017

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