Emission related to exciton-polariton coupling in porous SiC

T. V. Torchynska; A. Diaz Cano; J. A. Yescas Hernandez; Yu V. Vorobiev; L. V. Shcherbyna

doi:10.1002/pssc.201000327

Emission related to exciton-polariton coupling in porous SiC

T. V. Torchynska, A. Diaz Cano, J. A. Yescas Hernandez, Yu V. Vorobiev, L. V. Shcherbyna

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

The paper presents the results of SiC nanocrystal (NC) characterization using the photoluminescence (PL), its temperature dependence and X-ray diffraction (XRD) techniques. It is revealed that original n-type 6H-SiC wafers and porous 6H-SiC layers consisted inclusions of 2H-SiC, 4H-SiC, and 8H-SiC polytypes. The photoluminescence study has shown that in porous SiC layers the emission intensity of high energy PL bands enlarges. Temperature dependences of high energy PL bands testify that these PL bands related to excitons bounded at nitrogen donors in different SiC polytypes. The PL intensity enhancement of donor-bound exciton PL bands in the big size (50-250nm) SiC nanocrystals has been attributed to the realization of exciton weak confinement and exciton-polariton coupling in SiC nanocrystals.

Original language	English
Pages (from-to)	1974-1977
Number of pages	4
Journal	Physica Status Solidi (C) Current Topics in Solid State Physics
Volume	8
Issue number	6
DOIs	https://doi.org/10.1002/pssc.201000327
State	Published - Jun 2011

Keywords

Exciton-polariton coupling
Photoluminescence
SiC nanocrystals
Weak confinement

Access to Document

10.1002/pssc.201000327

Cite this

@article{c8d6811de1004b85bc581f03f2d7cbf9,

title = "Emission related to exciton-polariton coupling in porous SiC",

abstract = "The paper presents the results of SiC nanocrystal (NC) characterization using the photoluminescence (PL), its temperature dependence and X-ray diffraction (XRD) techniques. It is revealed that original n-type 6H-SiC wafers and porous 6H-SiC layers consisted inclusions of 2H-SiC, 4H-SiC, and 8H-SiC polytypes. The photoluminescence study has shown that in porous SiC layers the emission intensity of high energy PL bands enlarges. Temperature dependences of high energy PL bands testify that these PL bands related to excitons bounded at nitrogen donors in different SiC polytypes. The PL intensity enhancement of donor-bound exciton PL bands in the big size (50-250nm) SiC nanocrystals has been attributed to the realization of exciton weak confinement and exciton-polariton coupling in SiC nanocrystals.",

keywords = "Exciton-polariton coupling, Photoluminescence, SiC nanocrystals, Weak confinement",

author = "Torchynska, {T. V.} and {Diaz Cano}, A. and {Yescas Hernandez}, {J. A.} and Vorobiev, {Yu V.} and Shcherbyna, {L. V.}",

year = "2011",

month = jun,

doi = "10.1002/pssc.201000327",

language = "Ingl{\'e}s",

volume = "8",

pages = "1974--1977",

journal = "Physica Status Solidi (C) Current Topics in Solid State Physics",

issn = "1862-6351",

number = "6",

}

TY - JOUR

T1 - Emission related to exciton-polariton coupling in porous SiC

AU - Torchynska, T. V.

AU - Diaz Cano, A.

AU - Yescas Hernandez, J. A.

AU - Vorobiev, Yu V.

AU - Shcherbyna, L. V.

PY - 2011/6

Y1 - 2011/6

N2 - The paper presents the results of SiC nanocrystal (NC) characterization using the photoluminescence (PL), its temperature dependence and X-ray diffraction (XRD) techniques. It is revealed that original n-type 6H-SiC wafers and porous 6H-SiC layers consisted inclusions of 2H-SiC, 4H-SiC, and 8H-SiC polytypes. The photoluminescence study has shown that in porous SiC layers the emission intensity of high energy PL bands enlarges. Temperature dependences of high energy PL bands testify that these PL bands related to excitons bounded at nitrogen donors in different SiC polytypes. The PL intensity enhancement of donor-bound exciton PL bands in the big size (50-250nm) SiC nanocrystals has been attributed to the realization of exciton weak confinement and exciton-polariton coupling in SiC nanocrystals.

AB - The paper presents the results of SiC nanocrystal (NC) characterization using the photoluminescence (PL), its temperature dependence and X-ray diffraction (XRD) techniques. It is revealed that original n-type 6H-SiC wafers and porous 6H-SiC layers consisted inclusions of 2H-SiC, 4H-SiC, and 8H-SiC polytypes. The photoluminescence study has shown that in porous SiC layers the emission intensity of high energy PL bands enlarges. Temperature dependences of high energy PL bands testify that these PL bands related to excitons bounded at nitrogen donors in different SiC polytypes. The PL intensity enhancement of donor-bound exciton PL bands in the big size (50-250nm) SiC nanocrystals has been attributed to the realization of exciton weak confinement and exciton-polariton coupling in SiC nanocrystals.

KW - Exciton-polariton coupling

KW - Photoluminescence

KW - SiC nanocrystals

KW - Weak confinement

UR - http://www.scopus.com/inward/record.url?scp=79959632604&partnerID=8YFLogxK

U2 - 10.1002/pssc.201000327

DO - 10.1002/pssc.201000327

M3 - Artículo

SN - 1862-6351

VL - 8

SP - 1974

EP - 1977

JO - Physica Status Solidi (C) Current Topics in Solid State Physics

JF - Physica Status Solidi (C) Current Topics in Solid State Physics

IS - 6

ER -

Emission related to exciton-polariton coupling in porous SiC

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this