Emission of InAs quantum dots embedded in InGaAs/InAlGaAs/GaAs quantum wells

R. Cisneros Tamayo; I. J. Guerrero Moreno; G. Polupan; T. V. Torchynska; J. Palacios Gomez

doi:10.1016/j.jlumin.2013.12.053

Emission of InAs quantum dots embedded in InGaAs/InAlGaAs/GaAs quantum wells

R. Cisneros Tamayo, I. J. Guerrero Moreno, G. Polupan, T. V. Torchynska, J. Palacios Gomez

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

Photoluminescence (PL), its temperature dependences and X-ray diffraction (XRD) have been investigated in MBE grown GaAs/Al_0.3Ga _0.7As/In_0.15Ga_0.85As/InAlGaAs/GaAs quantum wells (QWs) with embedded InAs quantum dots (QDs). Studied QD structures are the important part of low-threshold, high-power lasers for optical fiber communication systems. Three types of QD structures with different capping layers (GaAs, Al_0.3Ga_0.7As and Al_0.1Ga _0.75In_0.15As) were investigated. The comparison of the impact of capping layer compositions on PL parameters of InAs QDs and the process of Ga/Al/In intermixing has been obtained. QD emission is analyzed in the temperature range of 10-500 K and the QD emission shift has been compared with the temperature shrinkage of band gaps in the bulk InAs and GaAs crystals. Different changes of QD compositions owing to Ga/Al/In intermixing have been revealed in studied structures. The XRD study is used to control a composition of QW layers and to confirm additionally that the efficiency of Ga/Al/In intermixing depends on capping layer types. The thermal decay of integrated PL intensities has been investigated as well. The PL thermal decay 557-fold in the range 10-300 K is revealed in the structure with GaAs capping layer in comparison with the 6- and 20-fold PL decays in structures with Al _0.3Ga_0.7As and Al_0.1Ga_0.75In _0.15As capping layers, respectively. The reason of PL spectrum transformation and the mechanism of PL thermal decay in QD structures with different capping layer compositions have been analyzed and discussed.

Original language	English
Pages (from-to)	1-6
Number of pages	6
Journal	Journal of Luminescence
Volume	149
DOIs	https://doi.org/10.1016/j.jlumin.2013.12.053
State	Published - May 2014

Keywords

InAs quantum dots
Photoluminescence
X-ray diffraction

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10.1016/j.jlumin.2013.12.053

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@article{89c08b69e1414d4cb4937355fbb5e1da,

title = "Emission of InAs quantum dots embedded in InGaAs/InAlGaAs/GaAs quantum wells",

abstract = "Photoluminescence (PL), its temperature dependences and X-ray diffraction (XRD) have been investigated in MBE grown GaAs/Al0.3Ga 0.7As/In0.15Ga0.85As/InAlGaAs/GaAs quantum wells (QWs) with embedded InAs quantum dots (QDs). Studied QD structures are the important part of low-threshold, high-power lasers for optical fiber communication systems. Three types of QD structures with different capping layers (GaAs, Al0.3Ga0.7As and Al0.1Ga 0.75In0.15As) were investigated. The comparison of the impact of capping layer compositions on PL parameters of InAs QDs and the process of Ga/Al/In intermixing has been obtained. QD emission is analyzed in the temperature range of 10-500 K and the QD emission shift has been compared with the temperature shrinkage of band gaps in the bulk InAs and GaAs crystals. Different changes of QD compositions owing to Ga/Al/In intermixing have been revealed in studied structures. The XRD study is used to control a composition of QW layers and to confirm additionally that the efficiency of Ga/Al/In intermixing depends on capping layer types. The thermal decay of integrated PL intensities has been investigated as well. The PL thermal decay 557-fold in the range 10-300 K is revealed in the structure with GaAs capping layer in comparison with the 6- and 20-fold PL decays in structures with Al 0.3Ga0.7As and Al0.1Ga0.75In 0.15As capping layers, respectively. The reason of PL spectrum transformation and the mechanism of PL thermal decay in QD structures with different capping layer compositions have been analyzed and discussed.",

keywords = "InAs quantum dots, Photoluminescence, X-ray diffraction",

author = "{Cisneros Tamayo}, R. and {Guerrero Moreno}, {I. J.} and G. Polupan and Torchynska, {T. V.} and {Palacios Gomez}, J.",

note = "Funding Information: The research was sponsored partially by the CONACYT (project 130387) and SIP-IPN, Mexico. We acknowledge Dr. Andreas Stinz from the Center of High Technology Materials at New Mexico University, Albuquerque, USA, for growing the studied QD structures and Dr. Jose Luis Casas Espinola for PL measurements.",

year = "2014",

month = may,

doi = "10.1016/j.jlumin.2013.12.053",

language = "Ingl{\'e}s",

volume = "149",

pages = "1--6",

journal = "Journal of Luminescence",

issn = "0022-2313",

}

TY - JOUR

T1 - Emission of InAs quantum dots embedded in InGaAs/InAlGaAs/GaAs quantum wells

AU - Cisneros Tamayo, R.

AU - Guerrero Moreno, I. J.

AU - Polupan, G.

AU - Torchynska, T. V.

AU - Palacios Gomez, J.

N1 - Funding Information: The research was sponsored partially by the CONACYT (project 130387) and SIP-IPN, Mexico. We acknowledge Dr. Andreas Stinz from the Center of High Technology Materials at New Mexico University, Albuquerque, USA, for growing the studied QD structures and Dr. Jose Luis Casas Espinola for PL measurements.

PY - 2014/5

Y1 - 2014/5

N2 - Photoluminescence (PL), its temperature dependences and X-ray diffraction (XRD) have been investigated in MBE grown GaAs/Al0.3Ga 0.7As/In0.15Ga0.85As/InAlGaAs/GaAs quantum wells (QWs) with embedded InAs quantum dots (QDs). Studied QD structures are the important part of low-threshold, high-power lasers for optical fiber communication systems. Three types of QD structures with different capping layers (GaAs, Al0.3Ga0.7As and Al0.1Ga 0.75In0.15As) were investigated. The comparison of the impact of capping layer compositions on PL parameters of InAs QDs and the process of Ga/Al/In intermixing has been obtained. QD emission is analyzed in the temperature range of 10-500 K and the QD emission shift has been compared with the temperature shrinkage of band gaps in the bulk InAs and GaAs crystals. Different changes of QD compositions owing to Ga/Al/In intermixing have been revealed in studied structures. The XRD study is used to control a composition of QW layers and to confirm additionally that the efficiency of Ga/Al/In intermixing depends on capping layer types. The thermal decay of integrated PL intensities has been investigated as well. The PL thermal decay 557-fold in the range 10-300 K is revealed in the structure with GaAs capping layer in comparison with the 6- and 20-fold PL decays in structures with Al 0.3Ga0.7As and Al0.1Ga0.75In 0.15As capping layers, respectively. The reason of PL spectrum transformation and the mechanism of PL thermal decay in QD structures with different capping layer compositions have been analyzed and discussed.

AB - Photoluminescence (PL), its temperature dependences and X-ray diffraction (XRD) have been investigated in MBE grown GaAs/Al0.3Ga 0.7As/In0.15Ga0.85As/InAlGaAs/GaAs quantum wells (QWs) with embedded InAs quantum dots (QDs). Studied QD structures are the important part of low-threshold, high-power lasers for optical fiber communication systems. Three types of QD structures with different capping layers (GaAs, Al0.3Ga0.7As and Al0.1Ga 0.75In0.15As) were investigated. The comparison of the impact of capping layer compositions on PL parameters of InAs QDs and the process of Ga/Al/In intermixing has been obtained. QD emission is analyzed in the temperature range of 10-500 K and the QD emission shift has been compared with the temperature shrinkage of band gaps in the bulk InAs and GaAs crystals. Different changes of QD compositions owing to Ga/Al/In intermixing have been revealed in studied structures. The XRD study is used to control a composition of QW layers and to confirm additionally that the efficiency of Ga/Al/In intermixing depends on capping layer types. The thermal decay of integrated PL intensities has been investigated as well. The PL thermal decay 557-fold in the range 10-300 K is revealed in the structure with GaAs capping layer in comparison with the 6- and 20-fold PL decays in structures with Al 0.3Ga0.7As and Al0.1Ga0.75In 0.15As capping layers, respectively. The reason of PL spectrum transformation and the mechanism of PL thermal decay in QD structures with different capping layer compositions have been analyzed and discussed.

KW - InAs quantum dots

KW - Photoluminescence

KW - X-ray diffraction

UR - http://www.scopus.com/inward/record.url?scp=84892769945&partnerID=8YFLogxK

U2 - 10.1016/j.jlumin.2013.12.053

DO - 10.1016/j.jlumin.2013.12.053

M3 - Artículo

SN - 0022-2313

VL - 149

SP - 1

EP - 6

JO - Journal of Luminescence

JF - Journal of Luminescence

ER -

Emission of InAs quantum dots embedded in InGaAs/InAlGaAs/GaAs quantum wells

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Keywords

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