Emission and X ray diffraction in AlGaAs/InGaAs quantum wells with embedded InAs quantum dots

R. Cisneros Tamayo, I. J.Gerrero Moreno, A. Vivas Hernandez, J. L.Casas Espinola, L. Shcherbyna

Research output: Contribution to journalConference articlepeer-review

Abstract

The photoluminescence (PL), its temperature dependence and X-ray diffraction (XRD) have been studied in MBE grown GaAs/AlGaAs/InGaAs/AlGaAs /GaAs quantum wells (QWs) with InAs quantum dots embedded in the center of InGaAs layer in the freshly prepared states and after the thermal treatments during 2 hours at 640 or 710 °C. The structures contained two buffer (Al 0.3Ga0.7As/In0.15Ga0.85As) and two capping (In0.15Ga0.85As / Al0.3Ga 0.7As) layers. The temperature dependences of PL peak positions have been analyzed in the temperature range 10-500K with the aim to investigate the QD composition and its variation at thermal annealing. The experimental parameters of the temperature variation of PL peak position in the InAs QDs have been compared with the known one for the bulk InAs crystals and the QD composition variation due to Ga/Al/In inter diffusion at thermal treatments has been detected. XRD have been studied with the aim to estimate the capping/buffer layer compositions in the different QW layers in freshly prepared state and after the thermal annealing. The obtained emission and XRD data and their dependences on the thermal treatment have been analyzed and discussed.

Translated title of the contributionEmisión y difracción de rayos X en pozos cuánticos de AlGaAs/InGaAs con puntos cuánticos de InAs incorporados
Original languageEnglish
Pages (from-to)43-48
Number of pages6
JournalMaterials Research Society Symposium Proceedings
Volume1617
DOIs
StatePublished - 2013
Event22nd International Materials Research Congress, IMRC 2013 - Cancun, Mexico
Duration: 11 Aug 201315 Aug 2013

Keywords

  • InAs quantum dots
  • XRD
  • luminescence

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