TY - JOUR
T1 - Emission and elastic strain study in GaAs/In0.15Ga0.85As/InxGa1−xAs/GaAs quantum wells with embedded InAs quantum dots
AU - Vega-Macotela, L. G.
AU - Torchynska, T. V.
AU - Polupan, G.
N1 - Publisher Copyright:
© 2017, Springer Science+Business Media New York.
PY - 2017/5/1
Y1 - 2017/5/1
N2 - GaAs/In0.15Ga0.85As/InxGa1−xAs/GaAs quantum wells (QWs) with embedded InAs quantum dots (QDs) and with variable In compositions in capping InxGa1−xAs layers (0.10 ≤ x ≤ 0.25) have been studied by means of photoluminescence, X ray diffraction (XRD) and high resolution XRD (HR-XRD) methods. InxGa1−xAs composition varying is accompanied by changing no monotonically the PL spectrum parameters of InAs QDs and by decreasing the InAs QD sizes. XRD and HR-XRD studies permit to control the InGaAs layer compositions and elastic strains in QWs. The analysis of HR-XRD results has shown that the level of elastic strain varies no monotonically in studied QD structures as well. The physical reasons of mentioned optical and structural effects and their dependences on capping layer compositions have been discussed.
AB - GaAs/In0.15Ga0.85As/InxGa1−xAs/GaAs quantum wells (QWs) with embedded InAs quantum dots (QDs) and with variable In compositions in capping InxGa1−xAs layers (0.10 ≤ x ≤ 0.25) have been studied by means of photoluminescence, X ray diffraction (XRD) and high resolution XRD (HR-XRD) methods. InxGa1−xAs composition varying is accompanied by changing no monotonically the PL spectrum parameters of InAs QDs and by decreasing the InAs QD sizes. XRD and HR-XRD studies permit to control the InGaAs layer compositions and elastic strains in QWs. The analysis of HR-XRD results has shown that the level of elastic strain varies no monotonically in studied QD structures as well. The physical reasons of mentioned optical and structural effects and their dependences on capping layer compositions have been discussed.
UR - http://www.scopus.com/inward/record.url?scp=85014903962&partnerID=8YFLogxK
U2 - 10.1007/s10854-017-6536-z
DO - 10.1007/s10854-017-6536-z
M3 - Artículo
SN - 0957-4522
VL - 28
SP - 7126
EP - 7131
JO - Journal of Materials Science: Materials in Electronics
JF - Journal of Materials Science: Materials in Electronics
IS - 10
ER -