Abstract
The transformation of the excitonic and donor-acceptor (DA) luminescence spectra of GaP:N p+-n-n+ light emitting diodes (LED) at the introduction of dislocations was investigated. The effect of a dislocation network was analyzed. Results showed that the presence of dislocations bring about a decrease in the luminescence intensity of excitonic bands, a more considerable decline in the intensity of zero-phonon lines than in that of their photonic replicas, and also the appearance of a new luminescence band.
Translated title of the contribution | Transformación de espectros de electro y fotoluminiscencia en LED GaP en la creación de dislocaciones |
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Original language | English |
Pages (from-to) | I/- |
Journal | Proceedings of SPIE - The International Society for Optical Engineering |
Volume | 3975 |
State | Published - 2000 |
Event | IWPSD-99: The 10th International Workshop on the Physics of Semiconductor Devices - New Delhi, India Duration: 14 Dec 1999 → 18 Dec 1999 |