Electro- and photoluminescence spectra transformation in GaP LEDs at the creation of dislocations

Tatyana V. Torchynska, Alia Kabatskaia, Nadezda Korsunskaya, Vladimir Kooshnirenko, Moissei Sheinkman, Georgiy Polupan

Research output: Contribution to journalConference articlepeer-review

Abstract

The transformation of the excitonic and donor-acceptor (DA) luminescence spectra of GaP:N p+-n-n+ light emitting diodes (LED) at the introduction of dislocations was investigated. The effect of a dislocation network was analyzed. Results showed that the presence of dislocations bring about a decrease in the luminescence intensity of excitonic bands, a more considerable decline in the intensity of zero-phonon lines than in that of their photonic replicas, and also the appearance of a new luminescence band.

Translated title of the contributionTransformación de espectros de electro y fotoluminiscencia en LED GaP en la creación de dislocaciones
Original languageEnglish
Pages (from-to)I/-
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume3975
StatePublished - 2000
EventIWPSD-99: The 10th International Workshop on the Physics of Semiconductor Devices - New Delhi, India
Duration: 14 Dec 199918 Dec 1999

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