Electro- and photoluminescence spectra transformation in GaP LEDs at the creation of dislocations

Tatyana V. Torchynska, Alia Kabatskaia, Nadezda Korsunskaya, Vladimir Kooshnirenko, Moissei Sheinkman, Georgiy Polupan

Research output: Contribution to conferencePaperResearch

Abstract

The transformation of the excitonic and donor-acceptor (DA) luminescence spectra of GaP:N p+-n-n+light emitting diodes (LED) at the introduction of dislocations was investigated. The effect of a dislocation network was analyzed. Results showed that the presence of dislocations bring about a decrease in the luminescence intensity of excitonic bands, a more considerable decline in the intensity of zero-phonon lines than in that of their photonic replicas, and also the appearance of a new luminescence band.
Original languageAmerican English
StatePublished - 1 Jan 2000
EventProceedings of SPIE - The International Society for Optical Engineering -
Duration: 31 Aug 2007 → …

Conference

ConferenceProceedings of SPIE - The International Society for Optical Engineering
Period31/08/07 → …

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Electroluminescence
electroluminescence
Light emitting diodes
Luminescence
Photoluminescence
light emitting diodes
luminescence
photoluminescence
replicas
Photonics
photonics

Cite this

Torchynska, T. V., Kabatskaia, A., Korsunskaya, N., Kooshnirenko, V., Sheinkman, M., & Polupan, G. (2000). Electro- and photoluminescence spectra transformation in GaP LEDs at the creation of dislocations. Paper presented at Proceedings of SPIE - The International Society for Optical Engineering, .
Torchynska, Tatyana V. ; Kabatskaia, Alia ; Korsunskaya, Nadezda ; Kooshnirenko, Vladimir ; Sheinkman, Moissei ; Polupan, Georgiy. / Electro- and photoluminescence spectra transformation in GaP LEDs at the creation of dislocations. Paper presented at Proceedings of SPIE - The International Society for Optical Engineering, .
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title = "Electro- and photoluminescence spectra transformation in GaP LEDs at the creation of dislocations",
abstract = "The transformation of the excitonic and donor-acceptor (DA) luminescence spectra of GaP:N p+-n-n+light emitting diodes (LED) at the introduction of dislocations was investigated. The effect of a dislocation network was analyzed. Results showed that the presence of dislocations bring about a decrease in the luminescence intensity of excitonic bands, a more considerable decline in the intensity of zero-phonon lines than in that of their photonic replicas, and also the appearance of a new luminescence band.",
author = "Torchynska, {Tatyana V.} and Alia Kabatskaia and Nadezda Korsunskaya and Vladimir Kooshnirenko and Moissei Sheinkman and Georgiy Polupan",
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Torchynska, TV, Kabatskaia, A, Korsunskaya, N, Kooshnirenko, V, Sheinkman, M & Polupan, G 2000, 'Electro- and photoluminescence spectra transformation in GaP LEDs at the creation of dislocations' Paper presented at Proceedings of SPIE - The International Society for Optical Engineering, 31/08/07, .

Electro- and photoluminescence spectra transformation in GaP LEDs at the creation of dislocations. / Torchynska, Tatyana V.; Kabatskaia, Alia; Korsunskaya, Nadezda; Kooshnirenko, Vladimir; Sheinkman, Moissei; Polupan, Georgiy.

2000. Paper presented at Proceedings of SPIE - The International Society for Optical Engineering, .

Research output: Contribution to conferencePaperResearch

TY - CONF

T1 - Electro- and photoluminescence spectra transformation in GaP LEDs at the creation of dislocations

AU - Torchynska, Tatyana V.

AU - Kabatskaia, Alia

AU - Korsunskaya, Nadezda

AU - Kooshnirenko, Vladimir

AU - Sheinkman, Moissei

AU - Polupan, Georgiy

PY - 2000/1/1

Y1 - 2000/1/1

N2 - The transformation of the excitonic and donor-acceptor (DA) luminescence spectra of GaP:N p+-n-n+light emitting diodes (LED) at the introduction of dislocations was investigated. The effect of a dislocation network was analyzed. Results showed that the presence of dislocations bring about a decrease in the luminescence intensity of excitonic bands, a more considerable decline in the intensity of zero-phonon lines than in that of their photonic replicas, and also the appearance of a new luminescence band.

AB - The transformation of the excitonic and donor-acceptor (DA) luminescence spectra of GaP:N p+-n-n+light emitting diodes (LED) at the introduction of dislocations was investigated. The effect of a dislocation network was analyzed. Results showed that the presence of dislocations bring about a decrease in the luminescence intensity of excitonic bands, a more considerable decline in the intensity of zero-phonon lines than in that of their photonic replicas, and also the appearance of a new luminescence band.

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M3 - Paper

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Torchynska TV, Kabatskaia A, Korsunskaya N, Kooshnirenko V, Sheinkman M, Polupan G. Electro- and photoluminescence spectra transformation in GaP LEDs at the creation of dislocations. 2000. Paper presented at Proceedings of SPIE - The International Society for Optical Engineering, .