Electrical Characteristics of Aluminum-CVD Diamond-Silicon Structures

Mansoor Alam; C. Gomez-Yanez

doi:10.1109/16.223721

Electrical Characteristics of Aluminum-CVD Diamond-Silicon Structures

Mansoor Alam, C. Gomez-Yanez

Research output: Contribution to journal › Article › peer-review

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Abstract

The behavior of aluminum-CVD diamond film (prepared by a hot filiament method)-silicon structures has been studied as a function of filament temperature which is one of the film deposition variables. As the filament temperature increases from 2173 to 2373 K, diamond-film surface roughness and crystallite size increase, nondiamond carbon content decreases, and device behavior changes from ohmic to Schottky. The diamond-film resistivity in all cases is substantially lower than that of bulk natural diamond and decreases with increasing filament temperature perhaps due to increased incorporation of hydrogen in the films.

Original language	English
Pages (from-to)	1554-1556
Number of pages	3
Journal	IEEE Transactions on Electron Devices
Volume	40
Issue number	8
DOIs	https://doi.org/10.1109/16.223721
State	Published - Aug 1993
Externally published	Yes

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title = "Electrical Characteristics of Aluminum-CVD Diamond-Silicon Structures",

abstract = "The behavior of aluminum-CVD diamond film (prepared by a hot filiament method)-silicon structures has been studied as a function of filament temperature which is one of the film deposition variables. As the filament temperature increases from 2173 to 2373 K, diamond-film surface roughness and crystallite size increase, nondiamond carbon content decreases, and device behavior changes from ohmic to Schottky. The diamond-film resistivity in all cases is substantially lower than that of bulk natural diamond and decreases with increasing filament temperature perhaps due to increased incorporation of hydrogen in the films.",

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AB - The behavior of aluminum-CVD diamond film (prepared by a hot filiament method)-silicon structures has been studied as a function of filament temperature which is one of the film deposition variables. As the filament temperature increases from 2173 to 2373 K, diamond-film surface roughness and crystallite size increase, nondiamond carbon content decreases, and device behavior changes from ohmic to Schottky. The diamond-film resistivity in all cases is substantially lower than that of bulk natural diamond and decreases with increasing filament temperature perhaps due to increased incorporation of hydrogen in the films.

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DO - 10.1109/16.223721

M3 - Artículo

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SP - 1554

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JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 8

ER -

Electrical Characteristics of Aluminum-CVD Diamond-Silicon Structures

Abstract

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