Effects of low-temperature annealing on electrical properties of Thin-film Transistors based on Zinc Oxide films deposited by ultrasonic spray pyrolysis: Impact of annealing time

Miguel A. Dominguez, Francisco Flores, Javier Martinez, Abdu Orduña-Diaz

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Abstract

© 2016 Elsevier B.V. In this work, the study of annealing effects on electrical properties of Zinc Oxide Thin-film Transistors is presented. The samples were annealed at 180 °C under Nitrogen ambient. The conductivity and contact resistance of ZnO films with Aluminum electrodes are studied by Transmission Line Method. Also, the Zinc Oxide films obtained by ultrasonic spray pyrolysis at 200 °C are studied by X-ray diffraction and Fourier transform infrared spectroscopy. A comparison of the electrical properties as a function of annealing time is presented. The results show an optimal annealing time and after this time, the metal-ZnO interface deteriorates.
Original languageAmerican English
Pages (from-to)243-246
Number of pages4
JournalThin Solid Films
DOIs
StatePublished - 30 Sep 2016

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