Effects of germane flow rate in electrical properties of a-SiGe:H films for ambipolar thin-film transistors

Miguel Dominguez; Pedro Rosales; Alfonso Torres; Francisco Flores; Joel Molina; Mario Moreno; Jose Luna; Abdu Orduña

doi:10.1016/j.tsf.2014.04.075

Effects of germane flow rate in electrical properties of a-SiGe:H films for ambipolar thin-film transistors

Miguel Dominguez, Pedro Rosales, Alfonso Torres, Francisco Flores, Joel Molina, Mario Moreno, Jose Luna, Abdu Orduña

Centro de Investigación en Biotecnología Aplicada (CIBA), Unidad Tlaxcala

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

In this work, the study of germane flow rate in electrical properties of a-SiGe:H films is presented. The a-SiGe:H films deposited by low frequency plasma-enhanced chemical vapor deposition at 300 °C were characterized by Fourier transform infrared spectroscopy, measurements of temperature dependence of conductivity and UV-visible spectroscopic ellipsometry. After finding the optimum germane flow rate conditions, a-SiGe:H films were deposited at 200 °C and analyzed. The use of a-SiGe:H films at 200 °C as active layer of low-temperature ambipolar thin-film transistors (TFTs) was demonstrated. The inverted staggered a-SiGe:H TFTs with Spin-On Glass as gate insulator were fabricated. These results suggest that there is an optimal Ge content in the a-SiGe:H films that improves its electrical properties.

Original language	English
Pages (from-to)	260-263
Number of pages	4
Journal	Thin Solid Films
Volume	562
DOIs	https://doi.org/10.1016/j.tsf.2014.04.075
State	Published - 1 Jul 2014

Keywords

Hydrogenated amorphous silicon-germanium
Low-temperature
Optical properties
PECVD
Thin-film transistor

Access to Document

10.1016/j.tsf.2014.04.075

Cite this

@article{2a80673afdd84993b896393a99dfa9ea,

title = "Effects of germane flow rate in electrical properties of a-SiGe:H films for ambipolar thin-film transistors",

abstract = "In this work, the study of germane flow rate in electrical properties of a-SiGe:H films is presented. The a-SiGe:H films deposited by low frequency plasma-enhanced chemical vapor deposition at 300 °C were characterized by Fourier transform infrared spectroscopy, measurements of temperature dependence of conductivity and UV-visible spectroscopic ellipsometry. After finding the optimum germane flow rate conditions, a-SiGe:H films were deposited at 200 °C and analyzed. The use of a-SiGe:H films at 200 °C as active layer of low-temperature ambipolar thin-film transistors (TFTs) was demonstrated. The inverted staggered a-SiGe:H TFTs with Spin-On Glass as gate insulator were fabricated. These results suggest that there is an optimal Ge content in the a-SiGe:H films that improves its electrical properties.",

keywords = "Hydrogenated amorphous silicon-germanium, Low-temperature, Optical properties, PECVD, Thin-film transistor",

author = "Miguel Dominguez and Pedro Rosales and Alfonso Torres and Francisco Flores and Joel Molina and Mario Moreno and Jose Luna and Abdu Ordu{\~n}a",

year = "2014",

month = jul,

day = "1",

doi = "10.1016/j.tsf.2014.04.075",

language = "Ingl{\'e}s",

volume = "562",

pages = "260--263",

journal = "Thin Solid Films",

issn = "0040-6090",

}

TY - JOUR

T1 - Effects of germane flow rate in electrical properties of a-SiGe:H films for ambipolar thin-film transistors

AU - Dominguez, Miguel

AU - Rosales, Pedro

AU - Torres, Alfonso

AU - Flores, Francisco

AU - Molina, Joel

AU - Moreno, Mario

AU - Luna, Jose

AU - Orduña, Abdu

PY - 2014/7/1

Y1 - 2014/7/1

N2 - In this work, the study of germane flow rate in electrical properties of a-SiGe:H films is presented. The a-SiGe:H films deposited by low frequency plasma-enhanced chemical vapor deposition at 300 °C were characterized by Fourier transform infrared spectroscopy, measurements of temperature dependence of conductivity and UV-visible spectroscopic ellipsometry. After finding the optimum germane flow rate conditions, a-SiGe:H films were deposited at 200 °C and analyzed. The use of a-SiGe:H films at 200 °C as active layer of low-temperature ambipolar thin-film transistors (TFTs) was demonstrated. The inverted staggered a-SiGe:H TFTs with Spin-On Glass as gate insulator were fabricated. These results suggest that there is an optimal Ge content in the a-SiGe:H films that improves its electrical properties.

AB - In this work, the study of germane flow rate in electrical properties of a-SiGe:H films is presented. The a-SiGe:H films deposited by low frequency plasma-enhanced chemical vapor deposition at 300 °C were characterized by Fourier transform infrared spectroscopy, measurements of temperature dependence of conductivity and UV-visible spectroscopic ellipsometry. After finding the optimum germane flow rate conditions, a-SiGe:H films were deposited at 200 °C and analyzed. The use of a-SiGe:H films at 200 °C as active layer of low-temperature ambipolar thin-film transistors (TFTs) was demonstrated. The inverted staggered a-SiGe:H TFTs with Spin-On Glass as gate insulator were fabricated. These results suggest that there is an optimal Ge content in the a-SiGe:H films that improves its electrical properties.

KW - Hydrogenated amorphous silicon-germanium

KW - Low-temperature

KW - Optical properties

KW - PECVD

KW - Thin-film transistor

UR - http://www.scopus.com/inward/record.url?scp=84901797957&partnerID=8YFLogxK

U2 - 10.1016/j.tsf.2014.04.075

DO - 10.1016/j.tsf.2014.04.075

M3 - Artículo

SN - 0040-6090

VL - 562

SP - 260

EP - 263

JO - Thin Solid Films

JF - Thin Solid Films

ER -

Effects of germane flow rate in electrical properties of a-SiGe:H films for ambipolar thin-film transistors

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this