TY - JOUR
T1 - Effect of the Sb content and the n− and p−GaSb(100) substrates on the physical and chemical properties of InSbxAs1-x alloys for mid-infrared applications
T2 - Analysis of surface, bulk and interface
AU - Casallas-Moreno, Y. L.
AU - Ramírez-López, M.
AU - Villa-Martínez, G.
AU - Martínez-López, A. L.
AU - Macias, M.
AU - Cruz-Orea, A.
AU - González de la Cruz, G.
AU - Tomás, S. A.
AU - Rodríguez-Fragoso, P.
AU - Herrera-Pérez, J. L.
AU - Mendoza-Álvarez, J. G.
N1 - Publisher Copyright:
© 2020 Elsevier B.V.
PY - 2021/4/25
Y1 - 2021/4/25
N2 - Antimonide-based family holds the potential for developing a new generation of mid-infrared applications. Here, we report on the growth of InSbxAs1-x alloys on n− and p−type GaSb(100) substrates varying the Sb mole fraction (x), using the liquid phase epitaxy (LPE) technique. We show that the ternary alloy grown on the n−type GaSb substrate presents higher crystalline quality, thermal diffusivity and interfacial thermal conductivity, as compared to the one grown on pin equation type GaSb substrates which decrease as the Sb mole fraction (x) in the layer increases. Our results demonstrate that the InSbxAs1-x/n−GaSb heterostructure reaches the thermal equilibrium faster than the InSbxAs1-x/p−GaSb structure, with lower roughness, strain, as well as a better chemical abruptness at substrate-layer interface. We also find that the growth mechanism of the InSbxAs1-x alloy is constituted by In−As and In−Sb bonds. Furthermore, the Raman scattering spectra measured at different layer depths evidence that the crystalline quality improves with depth and allow the identification of an intrinsic depletion region. Since the InSbxAs1-x alloy presents a long-range atomic order grown on both n− and p−type GaSb substrates, the phonon-plasmon coupled L− and L+ modes are observed, and from the L+ coupled mode, we obtain the intrinsic carrier concentration and its variation with the Sb mole fraction. Therefore, this work provides important guidance on the structural, thermal, and chemical properties of the surface, bulk and interface of InSbxAs1-x alloys, that should be considered to improve the performance of future devices, such as better heat dissipation.$
AB - Antimonide-based family holds the potential for developing a new generation of mid-infrared applications. Here, we report on the growth of InSbxAs1-x alloys on n− and p−type GaSb(100) substrates varying the Sb mole fraction (x), using the liquid phase epitaxy (LPE) technique. We show that the ternary alloy grown on the n−type GaSb substrate presents higher crystalline quality, thermal diffusivity and interfacial thermal conductivity, as compared to the one grown on pin equation type GaSb substrates which decrease as the Sb mole fraction (x) in the layer increases. Our results demonstrate that the InSbxAs1-x/n−GaSb heterostructure reaches the thermal equilibrium faster than the InSbxAs1-x/p−GaSb structure, with lower roughness, strain, as well as a better chemical abruptness at substrate-layer interface. We also find that the growth mechanism of the InSbxAs1-x alloy is constituted by In−As and In−Sb bonds. Furthermore, the Raman scattering spectra measured at different layer depths evidence that the crystalline quality improves with depth and allow the identification of an intrinsic depletion region. Since the InSbxAs1-x alloy presents a long-range atomic order grown on both n− and p−type GaSb substrates, the phonon-plasmon coupled L− and L+ modes are observed, and from the L+ coupled mode, we obtain the intrinsic carrier concentration and its variation with the Sb mole fraction. Therefore, this work provides important guidance on the structural, thermal, and chemical properties of the surface, bulk and interface of InSbxAs1-x alloys, that should be considered to improve the performance of future devices, such as better heat dissipation.$
KW - Growth mechanism
KW - InSbAs alloys
KW - Interfacial thermal conductivity
KW - Liquid phase epitaxy
KW - Phonon-plasmon coupled L and L modes
KW - Surface and interface properties
UR - http://www.scopus.com/inward/record.url?scp=85097058660&partnerID=8YFLogxK
U2 - 10.1016/j.jallcom.2020.157936
DO - 10.1016/j.jallcom.2020.157936
M3 - Artículo
AN - SCOPUS:85097058660
SN - 0925-8388
VL - 861
JO - Journal of Alloys and Compounds
JF - Journal of Alloys and Compounds
M1 - 157936
ER -