Effect of annealing conditions on structural transformation of ZnS thin film

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Abstract

Thin films of ZnS and ZnS doped with Cu and Al, i.e. ZnS:Cu, ZnS:[Cu, Al] with the thickness up to 1 μm were deposited by electron-beam evaporation (EBE) from three ZnS, ZnS:Cu and ZnS:[Cu, Al] targets onto ceramic BaTiO 3 and glass substrates heated up to 150-200°C. The films were annealed at the atmospheric pressure in S2-rich ambient atmosphere at 600-1000°C. The ZnS films were doped with Cu and Cl using the thermal treatment in a mixture of ZnS with the compounds of Cu and Cl. The ZnS:Cu and ZnS:[Cu, Cl] films were Ga co-doped by annealing in the S2-rich ambient atmosphere with additional vapors of Ga. The duration of each annealing was one hour. X-ray diffraction (XRD) technique and atomic force microscopy (AFM) were used for the investigation. Thin films deposited from different targets have only zincblende crystal structure. The annealing of ZnS, ZnS:Cu films at 1000°C in S2-rich atmosphere both with and without Ga co-doping does not result in the change of crystal structure. The diffusion of Cu and Cl into ZnS lattice at the annealing leads to phase transition from zincblende to wurtzite structure at 800°C, change of texture and increase of grain size. The phase transition temperature depends on the presence, type and ratio of doping elements. It was shown that Ga and Cl act as activators of recrystallization processes at the annealing. © by Oldenbourg Wissenschaftsverlag.
Original languageAmerican English
Pages287-292
Number of pages257
StatePublished - 1 Dec 2006
EventZeitschrift fur Kristallographie, Supplement -
Duration: 1 Dec 2006 → …

Conference

ConferenceZeitschrift fur Kristallographie, Supplement
Period1/12/06 → …

Fingerprint

annealing
Annealing
Thin films
phase transition
crystal structure
Crystal structure
Phase transitions
Doping (additives)
atmosphere
atomic force microscopy
Chemical elements
Superconducting transition temperature
Atmospheric pressure
Electron beams
Atomic force microscopy
Evaporation
ceramics
Textures
atmospheric pressure
Vapors

Cite this

Kryshtab, T., Palacios Gómez, J., & Mazin, M. (2006). Effect of annealing conditions on structural transformation of ZnS thin film. 287-292. Paper presented at Zeitschrift fur Kristallographie, Supplement, .
Kryshtab, T. ; Palacios Gómez, J. ; Mazin, M. / Effect of annealing conditions on structural transformation of ZnS thin film. Paper presented at Zeitschrift fur Kristallographie, Supplement, .257 p.
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abstract = "Thin films of ZnS and ZnS doped with Cu and Al, i.e. ZnS:Cu, ZnS:[Cu, Al] with the thickness up to 1 μm were deposited by electron-beam evaporation (EBE) from three ZnS, ZnS:Cu and ZnS:[Cu, Al] targets onto ceramic BaTiO 3 and glass substrates heated up to 150-200°C. The films were annealed at the atmospheric pressure in S2-rich ambient atmosphere at 600-1000°C. The ZnS films were doped with Cu and Cl using the thermal treatment in a mixture of ZnS with the compounds of Cu and Cl. The ZnS:Cu and ZnS:[Cu, Cl] films were Ga co-doped by annealing in the S2-rich ambient atmosphere with additional vapors of Ga. The duration of each annealing was one hour. X-ray diffraction (XRD) technique and atomic force microscopy (AFM) were used for the investigation. Thin films deposited from different targets have only zincblende crystal structure. The annealing of ZnS, ZnS:Cu films at 1000°C in S2-rich atmosphere both with and without Ga co-doping does not result in the change of crystal structure. The diffusion of Cu and Cl into ZnS lattice at the annealing leads to phase transition from zincblende to wurtzite structure at 800°C, change of texture and increase of grain size. The phase transition temperature depends on the presence, type and ratio of doping elements. It was shown that Ga and Cl act as activators of recrystallization processes at the annealing. {\circledC} by Oldenbourg Wissenschaftsverlag.",
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Kryshtab, T, Palacios Gómez, J & Mazin, M 2006, 'Effect of annealing conditions on structural transformation of ZnS thin film' Paper presented at Zeitschrift fur Kristallographie, Supplement, 1/12/06, pp. 287-292.

Effect of annealing conditions on structural transformation of ZnS thin film. / Kryshtab, T.; Palacios Gómez, J.; Mazin, M.

2006. 287-292 Paper presented at Zeitschrift fur Kristallographie, Supplement, .

Research output: Contribution to conferencePaperResearch

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N2 - Thin films of ZnS and ZnS doped with Cu and Al, i.e. ZnS:Cu, ZnS:[Cu, Al] with the thickness up to 1 μm were deposited by electron-beam evaporation (EBE) from three ZnS, ZnS:Cu and ZnS:[Cu, Al] targets onto ceramic BaTiO 3 and glass substrates heated up to 150-200°C. The films were annealed at the atmospheric pressure in S2-rich ambient atmosphere at 600-1000°C. The ZnS films were doped with Cu and Cl using the thermal treatment in a mixture of ZnS with the compounds of Cu and Cl. The ZnS:Cu and ZnS:[Cu, Cl] films were Ga co-doped by annealing in the S2-rich ambient atmosphere with additional vapors of Ga. The duration of each annealing was one hour. X-ray diffraction (XRD) technique and atomic force microscopy (AFM) were used for the investigation. Thin films deposited from different targets have only zincblende crystal structure. The annealing of ZnS, ZnS:Cu films at 1000°C in S2-rich atmosphere both with and without Ga co-doping does not result in the change of crystal structure. The diffusion of Cu and Cl into ZnS lattice at the annealing leads to phase transition from zincblende to wurtzite structure at 800°C, change of texture and increase of grain size. The phase transition temperature depends on the presence, type and ratio of doping elements. It was shown that Ga and Cl act as activators of recrystallization processes at the annealing. © by Oldenbourg Wissenschaftsverlag.

AB - Thin films of ZnS and ZnS doped with Cu and Al, i.e. ZnS:Cu, ZnS:[Cu, Al] with the thickness up to 1 μm were deposited by electron-beam evaporation (EBE) from three ZnS, ZnS:Cu and ZnS:[Cu, Al] targets onto ceramic BaTiO 3 and glass substrates heated up to 150-200°C. The films were annealed at the atmospheric pressure in S2-rich ambient atmosphere at 600-1000°C. The ZnS films were doped with Cu and Cl using the thermal treatment in a mixture of ZnS with the compounds of Cu and Cl. The ZnS:Cu and ZnS:[Cu, Cl] films were Ga co-doped by annealing in the S2-rich ambient atmosphere with additional vapors of Ga. The duration of each annealing was one hour. X-ray diffraction (XRD) technique and atomic force microscopy (AFM) were used for the investigation. Thin films deposited from different targets have only zincblende crystal structure. The annealing of ZnS, ZnS:Cu films at 1000°C in S2-rich atmosphere both with and without Ga co-doping does not result in the change of crystal structure. The diffusion of Cu and Cl into ZnS lattice at the annealing leads to phase transition from zincblende to wurtzite structure at 800°C, change of texture and increase of grain size. The phase transition temperature depends on the presence, type and ratio of doping elements. It was shown that Ga and Cl act as activators of recrystallization processes at the annealing. © by Oldenbourg Wissenschaftsverlag.

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Kryshtab T, Palacios Gómez J, Mazin M. Effect of annealing conditions on structural transformation of ZnS thin film. 2006. Paper presented at Zeitschrift fur Kristallographie, Supplement, .