@inproceedings{6e2c32aca8a742afa14227a151da138d,
title = "Development of ZnO/Ta 2O 5 heterojunction using low-temperature technological processes",
abstract = "ZnO/Ta 2O 5 heterojunctions were formed on glass substrates using low temperature processes. Formerly insulating Ta 2O 5 films were deposited on glass substrates by vacuum evaporation using Ta 2O 5 powder, Afterwards transparent and conductive ZnO films were formed on the Ta 2O 5 films by thermal oxidation at 320°C in air atmosphere of zinc (Zn) films deposited by dc sputtering process. Structural and optical properties of ZnO were investigated by X-ray diffraction (XRD) and photoluminescence (PL). The Ta 2O 5 insulating films were characterized by Raman scattering. The ZnO/Ta 2O 5 heterojunction was characterized by current-voltage measurements at room temperature as well as transient response under a rectangular-pulse voltage source. The electrical and the transient response suggest that the ZnO/Ta 2O 5 heterojunction is a potential alternative for the fabrication of alternating-current-driven thin film electroluminescent (ACTFEL) devices.",
author = "R. Baca and Andraca, {J. A.} and Arellano, {M. G.} and Paredes, {G. R.} and Sierra, {R. P.}",
year = "2011",
doi = "10.1557/opl.2011.1434",
language = "Ingl{\'e}s",
isbn = "9781618395023",
series = "Materials Research Society Symposium Proceedings",
pages = "51--56",
booktitle = "Low-Temperature-Processed Thin-Film Transistors",
note = "2010 MRS Fall Meeting ; Conference date: 29-11-2010 Through 03-12-2010",
}