Development of ZnO/Ta 2O 5 heterojunction using low-temperature technological processes

R. Baca, J. A. Andraca, M. G. Arellano, G. R. Paredes, R. P. Sierra

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

ZnO/Ta 2O 5 heterojunctions were formed on glass substrates using low temperature processes. Formerly insulating Ta 2O 5 films were deposited on glass substrates by vacuum evaporation using Ta 2O 5 powder, Afterwards transparent and conductive ZnO films were formed on the Ta 2O 5 films by thermal oxidation at 320°C in air atmosphere of zinc (Zn) films deposited by dc sputtering process. Structural and optical properties of ZnO were investigated by X-ray diffraction (XRD) and photoluminescence (PL). The Ta 2O 5 insulating films were characterized by Raman scattering. The ZnO/Ta 2O 5 heterojunction was characterized by current-voltage measurements at room temperature as well as transient response under a rectangular-pulse voltage source. The electrical and the transient response suggest that the ZnO/Ta 2O 5 heterojunction is a potential alternative for the fabrication of alternating-current-driven thin film electroluminescent (ACTFEL) devices.

Original languageEnglish
Title of host publicationLow-Temperature-Processed Thin-Film Transistors
Pages51-56
Number of pages6
DOIs
StatePublished - 2011
Externally publishedYes
Event2010 MRS Fall Meeting - Boston, MA, United States
Duration: 29 Nov 20103 Dec 2010

Publication series

NameMaterials Research Society Symposium Proceedings
Volume1287
ISSN (Print)0272-9172

Conference

Conference2010 MRS Fall Meeting
Country/TerritoryUnited States
CityBoston, MA
Period29/11/103/12/10

Fingerprint

Dive into the research topics of 'Development of ZnO/Ta 2O 5 heterojunction using low-temperature technological processes'. Together they form a unique fingerprint.

Cite this