Determination of the glass transition and nucleation temperatures in Ge2Sb2Te5 sputtered films

E. Morales-Sánchez, E. F. Prokhorov, A. Mendoza-Galván, J. González-Hernández

Research output: Contribution to journalArticlepeer-review

52 Scopus citations

Abstract

Amorphous Ge2Sb2Te5 films were prepared by rf sputtering from the bulk alloy. Their electrical and optical properties were analyzed using impedance and optical transmission measurements as a function of temperature. From this analysis, it is found that the glass transition temperature of the as-prepared amorphous films is of about 100°C. This result is confirmed by calorimetric measurements. Impedance and optical measurements in films measured at temperatures between the glass transition and the crystallization temperatures show the appearance of the nucleation centers. Using models for two-phase materials, the electrical parameters of the crystalline and amorphous phases were estimated and related with structural parameters of the samples.

Original languageEnglish
Pages (from-to)697-702
Number of pages6
JournalJournal of Applied Physics
Volume91
Issue number2
DOIs
StatePublished - 15 Jan 2002
Externally publishedYes

Fingerprint

Dive into the research topics of 'Determination of the glass transition and nucleation temperatures in Ge2Sb2Te5 sputtered films'. Together they form a unique fingerprint.

Cite this