TY - JOUR
T1 - Determination of minority carrier diffusion length of sprayed-Cu2ZnSnS4 thin films
AU - Courel, Maykel
AU - Valencia-Resendiz, E.
AU - Pulgarín-Agudelo, F. A.
AU - Vigil-Galán, O.
N1 - Publisher Copyright:
© 2015 Elsevier Ltd. All rights reserved.
PY - 2016/4/1
Y1 - 2016/4/1
N2 - Despite Cu2ZnSnS4(CZTS) is a potential candidate for solar cell applications, so far, low efficiency values have been reported. In particular, for spray-deposited CZTS, efficiencies lower than 2% are commonly achieved. It is well known that one of the most important parameters governing solar cell performance is minority carrier diffusion length (Ln). In this work, CZTS thin film solar cells with different compositional ratios are fabricated in order to study its impact on Ln values. The Ln parameter is calculated for sprayed-CZTS layers using external quantum efficiency measurements in conjunction with optical absorption coefficient versus wavelength measurements - for the first time. Values in the range of 0.11-0.17 μm are obtained emphasizing the need for improving sprayed-CZTS crystalline quality.
AB - Despite Cu2ZnSnS4(CZTS) is a potential candidate for solar cell applications, so far, low efficiency values have been reported. In particular, for spray-deposited CZTS, efficiencies lower than 2% are commonly achieved. It is well known that one of the most important parameters governing solar cell performance is minority carrier diffusion length (Ln). In this work, CZTS thin film solar cells with different compositional ratios are fabricated in order to study its impact on Ln values. The Ln parameter is calculated for sprayed-CZTS layers using external quantum efficiency measurements in conjunction with optical absorption coefficient versus wavelength measurements - for the first time. Values in the range of 0.11-0.17 μm are obtained emphasizing the need for improving sprayed-CZTS crystalline quality.
KW - CZTS thin films
KW - CZTS/CdS solar cells
KW - Minority carrier diffusion length
KW - Spray pyrolysis
UR - http://www.scopus.com/inward/record.url?scp=84952837546&partnerID=8YFLogxK
U2 - 10.1016/j.sse.2015.12.003
DO - 10.1016/j.sse.2015.12.003
M3 - Carta
SN - 0038-1101
VL - 118
SP - 1
EP - 3
JO - Solid-State Electronics
JF - Solid-State Electronics
ER -