TY - JOUR
T1 - Cu2ZnSn(S,Se)4 thin-films prepared from selenized nanocrystals ink
AU - Aruna-Devi, R.
AU - Latha, M.
AU - Velumani, S.
AU - Santos-Cruz, J.
AU - Murali, Banavoth
AU - Chávez-Carvayar, J. A.
AU - Pulgarín-Agudelo, F. A.
AU - Vigil-Galán, O.
N1 - Publisher Copyright:
© The Royal Society of Chemistry.
PY - 2019
Y1 - 2019
N2 - For the first time, CZTS ink was formulated using low-temperature heating up synthesis of NCs. Besides, the influence of powder concentration on the properties of the films was examined. Subsequently, the CZTS films were annealed under a selenium (Se)/argon (Ar) atmosphere at different temperatures to enhance their properties. The influence of selenization temperature on the properties of CZTS films was examined in detail. Structural analysis showed a peak shift towards lower 2 values for CZTSSe films because of Se incorporation, resulting in larger lattice parameters for CZTSSe than CZTS. As the selenization temperature increases, an increment in the grain size was observed and the band gap was decreased from 1.52 to 1.05 eV. Hall Effect studies revealed a significant improvement in the mobility and carrier concentration with respect to selenization temperatures. Moreover, film selenized at 550 °C exhibited higher photoconductivity as compared to other films, indicating their potential application in the field of low-cost thin-film solar cells.
AB - For the first time, CZTS ink was formulated using low-temperature heating up synthesis of NCs. Besides, the influence of powder concentration on the properties of the films was examined. Subsequently, the CZTS films were annealed under a selenium (Se)/argon (Ar) atmosphere at different temperatures to enhance their properties. The influence of selenization temperature on the properties of CZTS films was examined in detail. Structural analysis showed a peak shift towards lower 2 values for CZTSSe films because of Se incorporation, resulting in larger lattice parameters for CZTSSe than CZTS. As the selenization temperature increases, an increment in the grain size was observed and the band gap was decreased from 1.52 to 1.05 eV. Hall Effect studies revealed a significant improvement in the mobility and carrier concentration with respect to selenization temperatures. Moreover, film selenized at 550 °C exhibited higher photoconductivity as compared to other films, indicating their potential application in the field of low-cost thin-film solar cells.
UR - http://www.scopus.com/inward/record.url?scp=85068059308&partnerID=8YFLogxK
U2 - 10.1039/c9ra02669j
DO - 10.1039/c9ra02669j
M3 - Artículo
AN - SCOPUS:85068059308
SN - 2046-2069
VL - 9
SP - 18420
EP - 18428
JO - RSC Advances
JF - RSC Advances
IS - 32
ER -