Cu2ZnSn(S,Se)4 thin-films prepared from selenized nanocrystals ink

R. Aruna-Devi, M. Latha, S. Velumani, J. Santos-Cruz, Banavoth Murali, J. A. Chávez-Carvayar, F. A. Pulgarín-Agudelo, O. Vigil-Galán

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    Abstract

    For the first time, CZTS ink was formulated using low-temperature heating up synthesis of NCs. Besides, the influence of powder concentration on the properties of the films was examined. Subsequently, the CZTS films were annealed under a selenium (Se)/argon (Ar) atmosphere at different temperatures to enhance their properties. The influence of selenization temperature on the properties of CZTS films was examined in detail. Structural analysis showed a peak shift towards lower 2 values for CZTSSe films because of Se incorporation, resulting in larger lattice parameters for CZTSSe than CZTS. As the selenization temperature increases, an increment in the grain size was observed and the band gap was decreased from 1.52 to 1.05 eV. Hall Effect studies revealed a significant improvement in the mobility and carrier concentration with respect to selenization temperatures. Moreover, film selenized at 550 °C exhibited higher photoconductivity as compared to other films, indicating their potential application in the field of low-cost thin-film solar cells.

    Original languageEnglish
    Pages (from-to)18420-18428
    Number of pages9
    JournalRSC Advances
    Volume9
    Issue number32
    DOIs
    StatePublished - 1 Jan 2019

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    Aruna-Devi, R., Latha, M., Velumani, S., Santos-Cruz, J., Murali, B., Chávez-Carvayar, J. A., Pulgarín-Agudelo, F. A., & Vigil-Galán, O. (2019). Cu2ZnSn(S,Se)4 thin-films prepared from selenized nanocrystals ink. RSC Advances, 9(32), 18420-18428. https://doi.org/10.1039/c9ra02669j