TY - JOUR
T1 - Cu doping concentration effect on the physical properties of CdS thin films obtained by the CBD technique
AU - Albor Aguilera, M. L.
AU - Flores Márquez, J. M.
AU - Remolina Millan, A.
AU - Matsumoto Kuwabara, Y.
AU - González Trujillo, M. A.
AU - Hernández Vásquez, C.
AU - Aguilar Hernandez, J. R.
AU - Hernández Pérez, M. A.
AU - Courel-Piedrahita, M.
AU - Yee Madeira, H. T.
N1 - Publisher Copyright:
© 2017 IOP Publishing Ltd.
PY - 2017/8
Y1 - 2017/8
N2 - Cu(In, Ga)Se2 (CIGS) and Cu2ZnSnS4 (CZTS) semiconductors are direct band gap materials; when these types of material are used in solar cells, they provide efficiencies of 22.1% and 12.6%, respectively. Most traditional fabrication methods involve expensive vacuum processes including co-evaporation and sputtering techniques, where films and doping are conducted separately. On the other hand, the chemical bath deposition (CBD) technique allows an in situ process. Cu-doped CdS thin films working as a buffer layer on solar cells provide good performing devices and they may be deposited by low cost techniques such as chemical methods. In this work, Cu-doped CdS thin films were deposited using the CBD technique on SnO2:F (FTO) substrates. The elemental analysis and mapping reconstruction were conducted by EDXS. Morphological, optical and electrical properties were studied, and they revealed that Cu doping modified the CdS structure, band-gap value and the electrical properties. Cu-doped CdS films show high resistivity compared to the non-doped CdS. The appropriate parameters of Cu-doped CdS films were determined to obtain an adequate window or buffer layer on CIGS and CZTS photovoltaic solar cells.
AB - Cu(In, Ga)Se2 (CIGS) and Cu2ZnSnS4 (CZTS) semiconductors are direct band gap materials; when these types of material are used in solar cells, they provide efficiencies of 22.1% and 12.6%, respectively. Most traditional fabrication methods involve expensive vacuum processes including co-evaporation and sputtering techniques, where films and doping are conducted separately. On the other hand, the chemical bath deposition (CBD) technique allows an in situ process. Cu-doped CdS thin films working as a buffer layer on solar cells provide good performing devices and they may be deposited by low cost techniques such as chemical methods. In this work, Cu-doped CdS thin films were deposited using the CBD technique on SnO2:F (FTO) substrates. The elemental analysis and mapping reconstruction were conducted by EDXS. Morphological, optical and electrical properties were studied, and they revealed that Cu doping modified the CdS structure, band-gap value and the electrical properties. Cu-doped CdS films show high resistivity compared to the non-doped CdS. The appropriate parameters of Cu-doped CdS films were determined to obtain an adequate window or buffer layer on CIGS and CZTS photovoltaic solar cells.
KW - CdS
KW - Chemical bath deposition (CBD)
KW - Cu-doped CdS
KW - Solar cells
UR - http://www.scopus.com/inward/record.url?scp=85029148475&partnerID=8YFLogxK
U2 - 10.1088/2053-1591/aa810c
DO - 10.1088/2053-1591/aa810c
M3 - Artículo
SN - 2053-1591
VL - 4
JO - Materials Research Express
JF - Materials Research Express
IS - 8
M1 - 086410
ER -