Abstract
The growth of tungsten oxide nanowires on silicon substrates without using any catalyst is demonstrated by means of close-spaced vapor transport (CSVT) technique at atmospheric pressure. The source was formerly prepared from a tungsten foil to produce a tungsten oxide film. CSVT array is completed with silicon substrates located at a distance of ∼350 μm over the tungsten oxide source at moderate temperatures (∼750°C). Two distinct kinds of nanostructures were produced; a uniform distribution of free standing tungsten oxide wires of several micrometers in length with diameters less than 150 nm; and wires assembled to form nanowire bundle. The X-ray diffraction characterizations show that the phases of WO 2.7 and WO 2.9 are present.
Original language | English |
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Pages (from-to) | 31-37 |
Number of pages | 7 |
Journal | Journal of Nano Research |
Volume | 9 |
DOIs | |
State | Published - 15 Feb 2010 |
Externally published | Yes |
Keywords
- CSVT
- Nanowires
- Tungsten oxide