CSVT as a technique to obtain nanostructured materials: WO<inf>3-x</inf>

O. Goiz, F. Chávez, C. Felipe, R. Peña-Sierra, N. Morales

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

The growth of tungsten oxide nanowires on silicon substrates without using any catalyst is demonstrated by means of close-spaced vapor transport (CSVT) technique at atmospheric pressure. The source was formerly prepared from a tungsten foil to produce a tungsten oxide film. CSVT array is completed with silicon substrates located at a distance of ∼350 μm over the tungsten oxide source at moderate temperatures (∼750°C). Two distinct kinds of nanostructures were produced; a uniform distribution of free standing tungsten oxide wires of several micrometers in length with diameters less than 150 nm; and wires assembled to form nanowire bundle. The X-ray diffraction characterizations show that the phases of WO 2.7 and WO 2.9 are present. © (2010) trans Tech Publications, Switzerland.
Original languageAmerican English
Pages (from-to)31-37
Number of pages27
JournalJournal of Nano Research
DOIs
StatePublished - 15 Feb 2010
Externally publishedYes

Fingerprint

tungsten oxides
Nanostructured materials
Tungsten
Vapors
vapors
Silicon
Nanowires
nanowires
Oxides
wire
Wire
silicon
Substrates
Switzerland
Metal foil
Atmospheric pressure
bundles
Oxide films
oxide films
micrometers

Cite this

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abstract = "The growth of tungsten oxide nanowires on silicon substrates without using any catalyst is demonstrated by means of close-spaced vapor transport (CSVT) technique at atmospheric pressure. The source was formerly prepared from a tungsten foil to produce a tungsten oxide film. CSVT array is completed with silicon substrates located at a distance of ∼350 μm over the tungsten oxide source at moderate temperatures (∼750°C). Two distinct kinds of nanostructures were produced; a uniform distribution of free standing tungsten oxide wires of several micrometers in length with diameters less than 150 nm; and wires assembled to form nanowire bundle. The X-ray diffraction characterizations show that the phases of WO 2.7 and WO 2.9 are present. {\circledC} (2010) trans Tech Publications, Switzerland.",
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CSVT as a technique to obtain nanostructured materials: WO<inf>3-x</inf> / Goiz, O.; Chávez, F.; Felipe, C.; Peña-Sierra, R.; Morales, N.

In: Journal of Nano Research, 15.02.2010, p. 31-37.

Research output: Contribution to journalArticle

TY - JOUR

T1 - CSVT as a technique to obtain nanostructured materials: WO3-x

AU - Goiz, O.

AU - Chávez, F.

AU - Felipe, C.

AU - Peña-Sierra, R.

AU - Morales, N.

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AB - The growth of tungsten oxide nanowires on silicon substrates without using any catalyst is demonstrated by means of close-spaced vapor transport (CSVT) technique at atmospheric pressure. The source was formerly prepared from a tungsten foil to produce a tungsten oxide film. CSVT array is completed with silicon substrates located at a distance of ∼350 μm over the tungsten oxide source at moderate temperatures (∼750°C). Two distinct kinds of nanostructures were produced; a uniform distribution of free standing tungsten oxide wires of several micrometers in length with diameters less than 150 nm; and wires assembled to form nanowire bundle. The X-ray diffraction characterizations show that the phases of WO 2.7 and WO 2.9 are present. © (2010) trans Tech Publications, Switzerland.

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