TY - JOUR
T1 - Contact resistance assessment and high-frequency performance projection of black phosphorus field-effect transistor technologies
AU - Valdez-Sandoval, Leslie
AU - Ramirez-Garcia, Eloy
AU - Jiménez, David
AU - Pacheco-Sanchez, Anibal
N1 - Publisher Copyright:
© 2020 IOP Publishing Ltd.
PY - 2020/10
Y1 - 2020/10
N2 - In this work, an evaluation of the contact quality of black phosphorus field-effect transistors from different technologies previously reported is performed by means of an efficient and reliable contact resistance extraction methodology based on individual device practical characteristics. A good agreement is achieved between the extracted values with the Y-function method used here and reference values obtained with other methods considering internal values as well as with more expensive methods involving fabricated test structures. The method enables a direct evaluation of different steps in the same technology and it embraces the temperature dependence of the contact characteristics. Channel phenomena have no impact on the extracted contact resistance values. High-frequency performance projections are obtained for fabricated devices based on the extracted contact resistance.
AB - In this work, an evaluation of the contact quality of black phosphorus field-effect transistors from different technologies previously reported is performed by means of an efficient and reliable contact resistance extraction methodology based on individual device practical characteristics. A good agreement is achieved between the extracted values with the Y-function method used here and reference values obtained with other methods considering internal values as well as with more expensive methods involving fabricated test structures. The method enables a direct evaluation of different steps in the same technology and it embraces the temperature dependence of the contact characteristics. Channel phenomena have no impact on the extracted contact resistance values. High-frequency performance projections are obtained for fabricated devices based on the extracted contact resistance.
KW - AC performance
KW - BPFET
KW - Schottky barrier
KW - contact resistance
UR - http://www.scopus.com/inward/record.url?scp=85094966811&partnerID=8YFLogxK
U2 - 10.1088/1361-6641/abbaed
DO - 10.1088/1361-6641/abbaed
M3 - Artículo
AN - SCOPUS:85094966811
SN - 0268-1242
VL - 35
JO - Semiconductor Science and Technology
JF - Semiconductor Science and Technology
IS - 12
M1 - 125016
ER -