TY - JOUR
T1 - Computation of the porous silicon dielectric function in the supercell model and comparison with experiment
AU - Tagüeña-Martínez, J.
AU - Rubo, Y. G.
AU - Beltrán, M.
AU - Wang, C.
AU - Cruz, M.
PY - 2000
Y1 - 2000
N2 - We present the results imaginary part of the dielectric function of porous silicon, which were obtained with the tight-binding 128-atom supercell model for different porosities. The supercells have been chosen to allow the interconnection of the Si skeleton. We have analyzed also the effects of pore morphology. We have found that, at a fixed porosity, the developing of the surface, resulting in the increase of saturating hydrogen atoms, leads to a noticeable blueshift of the absorption edge.
AB - We present the results imaginary part of the dielectric function of porous silicon, which were obtained with the tight-binding 128-atom supercell model for different porosities. The supercells have been chosen to allow the interconnection of the Si skeleton. We have analyzed also the effects of pore morphology. We have found that, at a fixed porosity, the developing of the surface, resulting in the increase of saturating hydrogen atoms, leads to a noticeable blueshift of the absorption edge.
UR - http://www.scopus.com/inward/record.url?scp=0034446934&partnerID=8YFLogxK
M3 - Artículo de la conferencia
AN - SCOPUS:0034446934
SN - 0272-9172
VL - 579
SP - 231
EP - 236
JO - Materials Research Society Symposium - Proceedings
JF - Materials Research Society Symposium - Proceedings
T2 - Optical Properties of Materials
Y2 - 30 November 1999 through 2 December 1999
ER -