Compensation mechanisms at high temperature in Y-doped BaTiO3

M. Paredes-Olguín; I. A. Lira-Hernández; C. Gómez-Yáñez; F. P. Espino-Cortés

doi:10.1016/j.physb.2012.11.001

Compensation mechanisms at high temperature in Y-doped BaTiO₃

M. Paredes-Olguín, I. A. Lira-Hernández, C. Gómez-Yáñez, F. P. Espino-Cortés

Escuela Superior de Ingeniería Mecánica y Eléctrica (ESIME), Unidad Zacatenco

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12 Scopus citations

Abstract

Samples of BaTiO₃ with different concentrations of Y were synthesized from powders. The mixtures of powders were pressed and sintered at 1500 °C for 1 h. Two groups of samples were processed, one satisfying Ba/(Ti+Y)<1 and the other satisfying Ba/(Ti+Y)=1. X-ray diffraction patterns were analyzed by Rietveld refinement and it was concluded that Y³⁺ occupies the Ti⁴⁺ lattice sites. The conductivity behavior as a function of Y concentration suggests that the compensation mechanisms are hole and oxygen vacancies. Due to the presence of charge carriers in the material, high values for the dielectric constant and dielectric loss were observed. Analysis of the microstructure showed that the average grain size decreases as the Y concentration is increased.

Original language	English
Pages (from-to)	157-161
Number of pages	5
Journal	Physica B: Condensed Matter
Volume	410
Issue number	1
DOIs	https://doi.org/10.1016/j.physb.2012.11.001
State	Published - 1 Feb 2013

Keywords

BaTiO and titanates
Defects
Electrical conductivity
Sintering

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10.1016/j.physb.2012.11.001

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abstract = "Samples of BaTiO3 with different concentrations of Y were synthesized from powders. The mixtures of powders were pressed and sintered at 1500 °C for 1 h. Two groups of samples were processed, one satisfying Ba/(Ti+Y)<1 and the other satisfying Ba/(Ti+Y)=1. X-ray diffraction patterns were analyzed by Rietveld refinement and it was concluded that Y3+ occupies the Ti4+ lattice sites. The conductivity behavior as a function of Y concentration suggests that the compensation mechanisms are hole and oxygen vacancies. Due to the presence of charge carriers in the material, high values for the dielectric constant and dielectric loss were observed. Analysis of the microstructure showed that the average grain size decreases as the Y concentration is increased.",

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AU - Paredes-Olguín, M.

AU - Lira-Hernández, I. A.

AU - Gómez-Yáñez, C.

AU - Espino-Cortés, F. P.

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N2 - Samples of BaTiO3 with different concentrations of Y were synthesized from powders. The mixtures of powders were pressed and sintered at 1500 °C for 1 h. Two groups of samples were processed, one satisfying Ba/(Ti+Y)<1 and the other satisfying Ba/(Ti+Y)=1. X-ray diffraction patterns were analyzed by Rietveld refinement and it was concluded that Y3+ occupies the Ti4+ lattice sites. The conductivity behavior as a function of Y concentration suggests that the compensation mechanisms are hole and oxygen vacancies. Due to the presence of charge carriers in the material, high values for the dielectric constant and dielectric loss were observed. Analysis of the microstructure showed that the average grain size decreases as the Y concentration is increased.

AB - Samples of BaTiO3 with different concentrations of Y were synthesized from powders. The mixtures of powders were pressed and sintered at 1500 °C for 1 h. Two groups of samples were processed, one satisfying Ba/(Ti+Y)<1 and the other satisfying Ba/(Ti+Y)=1. X-ray diffraction patterns were analyzed by Rietveld refinement and it was concluded that Y3+ occupies the Ti4+ lattice sites. The conductivity behavior as a function of Y concentration suggests that the compensation mechanisms are hole and oxygen vacancies. Due to the presence of charge carriers in the material, high values for the dielectric constant and dielectric loss were observed. Analysis of the microstructure showed that the average grain size decreases as the Y concentration is increased.

KW - BaTiO and titanates

KW - Defects

KW - Electrical conductivity

KW - Sintering

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Compensation mechanisms at high temperature in Y-doped BaTiO₃

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Keywords

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