Compensation mechanisms at high temperature in Y-doped BaTiO<inf>3</inf>

M. Paredes-Olguín, I. A. Lira-Hernández, C. Gómez-Yáñez, F. P. Espino-Cortés

Research output: Contribution to journalArticle

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Abstract

Samples of BaTiO3 with different concentrations of Y were synthesized from powders. The mixtures of powders were pressed and sintered at 1500 °C for 1 h. Two groups of samples were processed, one satisfying Ba/(Ti+Y)<1 and the other satisfying Ba/(Ti+Y)=1. X-ray diffraction patterns were analyzed by Rietveld refinement and it was concluded that Y3+ occupies the Ti4+ lattice sites. The conductivity behavior as a function of Y concentration suggests that the compensation mechanisms are hole and oxygen vacancies. Due to the presence of charge carriers in the material, high values for the dielectric constant and dielectric loss were observed. Analysis of the microstructure showed that the average grain size decreases as the Y concentration is increased. © 2012 Elsevier B.V.
Original languageAmerican English
Pages (from-to)157-161
Number of pages140
JournalPhysica B: Condensed Matter
DOIs
StatePublished - 1 Feb 2013

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Powders
microstructure
conductivity
grain size
X-ray diffraction
oxygen
Rietveld refinement
Oxygen vacancies
Dielectric losses
Charge carriers
Diffraction patterns
Permittivity
dielectric loss
X ray diffraction
Temperature
Microstructure
charge carriers
diffraction patterns
permittivity
Compensation and Redress

Cite this

@article{08ed07fac8cf47e4af934a9af1fefe5f,
title = "Compensation mechanisms at high temperature in Y-doped BaTiO3",
abstract = "Samples of BaTiO3 with different concentrations of Y were synthesized from powders. The mixtures of powders were pressed and sintered at 1500 °C for 1 h. Two groups of samples were processed, one satisfying Ba/(Ti+Y)<1 and the other satisfying Ba/(Ti+Y)=1. X-ray diffraction patterns were analyzed by Rietveld refinement and it was concluded that Y3+ occupies the Ti4+ lattice sites. The conductivity behavior as a function of Y concentration suggests that the compensation mechanisms are hole and oxygen vacancies. Due to the presence of charge carriers in the material, high values for the dielectric constant and dielectric loss were observed. Analysis of the microstructure showed that the average grain size decreases as the Y concentration is increased. {\circledC} 2012 Elsevier B.V.",
author = "M. Paredes-Olgu{\'i}n and Lira-Hern{\'a}ndez, {I. A.} and C. G{\'o}mez-Y{\'a}{\~n}ez and Espino-Cort{\'e}s, {F. P.}",
year = "2013",
month = "2",
day = "1",
doi = "10.1016/j.physb.2012.11.001",
language = "American English",
pages = "157--161",
journal = "Physica B: Condensed Matter",
issn = "0921-4526",
publisher = "Elsevier",

}

Compensation mechanisms at high temperature in Y-doped BaTiO<inf>3</inf> / Paredes-Olguín, M.; Lira-Hernández, I. A.; Gómez-Yáñez, C.; Espino-Cortés, F. P.

In: Physica B: Condensed Matter, 01.02.2013, p. 157-161.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Compensation mechanisms at high temperature in Y-doped BaTiO3

AU - Paredes-Olguín, M.

AU - Lira-Hernández, I. A.

AU - Gómez-Yáñez, C.

AU - Espino-Cortés, F. P.

PY - 2013/2/1

Y1 - 2013/2/1

N2 - Samples of BaTiO3 with different concentrations of Y were synthesized from powders. The mixtures of powders were pressed and sintered at 1500 °C for 1 h. Two groups of samples were processed, one satisfying Ba/(Ti+Y)<1 and the other satisfying Ba/(Ti+Y)=1. X-ray diffraction patterns were analyzed by Rietveld refinement and it was concluded that Y3+ occupies the Ti4+ lattice sites. The conductivity behavior as a function of Y concentration suggests that the compensation mechanisms are hole and oxygen vacancies. Due to the presence of charge carriers in the material, high values for the dielectric constant and dielectric loss were observed. Analysis of the microstructure showed that the average grain size decreases as the Y concentration is increased. © 2012 Elsevier B.V.

AB - Samples of BaTiO3 with different concentrations of Y were synthesized from powders. The mixtures of powders were pressed and sintered at 1500 °C for 1 h. Two groups of samples were processed, one satisfying Ba/(Ti+Y)<1 and the other satisfying Ba/(Ti+Y)=1. X-ray diffraction patterns were analyzed by Rietveld refinement and it was concluded that Y3+ occupies the Ti4+ lattice sites. The conductivity behavior as a function of Y concentration suggests that the compensation mechanisms are hole and oxygen vacancies. Due to the presence of charge carriers in the material, high values for the dielectric constant and dielectric loss were observed. Analysis of the microstructure showed that the average grain size decreases as the Y concentration is increased. © 2012 Elsevier B.V.

UR - https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84872326594&origin=inward

UR - https://www.scopus.com/inward/citedby.uri?partnerID=HzOxMe3b&scp=84872326594&origin=inward

U2 - 10.1016/j.physb.2012.11.001

DO - 10.1016/j.physb.2012.11.001

M3 - Article

SP - 157

EP - 161

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

SN - 0921-4526

ER -