Comparison of source/drain electrodes in thin-film transistors based on room temperature deposited zinc nitride films

Miguel A. Dominguez; Jose Luis Pau; Abdu Orduña-Diaz; Andres Redondo-Cubero

doi:10.1016/j.sse.2019.03.032

Comparison of source/drain electrodes in thin-film transistors based on room temperature deposited zinc nitride films

Miguel A. Dominguez, Jose Luis Pau, Abdu Orduña-Diaz, Andres Redondo-Cubero

Centro de Investigación en Biotecnología Aplicada (CIBA), Unidad Tlaxcala

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

In this work, the comparison of source/drain electrodes in thin film transistors (TFTs) based on room temperature deposited Zinc Nitride (Zn ₃ N ₂ ) films is presented. Aluminum and aluminum doped zinc oxide (AZO) films are used as electrodes. Both devices exhibit an on/off-current ratio of 10 ⁴ and a subthreshold slope close to 1 V/Dec. The extracted field-effect mobility was 4.5 cm ² /Vs and 1 cm ² /Vs for TFTs using aluminum and AZO, respectively. Better electrical characteristics are achieved with aluminum electrodes. However, AZO electrodes made possible the fabrication of fully transparent Zn ₃ N ₂ TFTs, reported for first time in this work.

Original language	English
Pages (from-to)	12-15
Number of pages	4
Journal	Solid-State Electronics
Volume	156
DOIs	https://doi.org/10.1016/j.sse.2019.03.032 https://doi.org/10.1016/j.sse.2019.03.032
State	Published - Jun 2019

Keywords

AZO
Spin-on glass
Thin-film transistors
Transparent devices
Zinc nitride

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title = "Comparison of source/drain electrodes in thin-film transistors based on room temperature deposited zinc nitride films",

abstract = " In this work, the comparison of source/drain electrodes in thin film transistors (TFTs) based on room temperature deposited Zinc Nitride (Zn 3 N 2 ) films is presented. Aluminum and aluminum doped zinc oxide (AZO) films are used as electrodes. Both devices exhibit an on/off-current ratio of 10 4 and a subthreshold slope close to 1 V/Dec. The extracted field-effect mobility was 4.5 cm 2 /Vs and 1 cm 2 /Vs for TFTs using aluminum and AZO, respectively. Better electrical characteristics are achieved with aluminum electrodes. However, AZO electrodes made possible the fabrication of fully transparent Zn 3 N 2 TFTs, reported for first time in this work. ",

keywords = "AZO, Spin-on glass, Thin-film transistors, Transparent devices, Zinc nitride",

author = "Dominguez, {Miguel A.} and Pau, {Jose Luis} and Abdu Ordu{\~n}a-Diaz and Andres Redondo-Cubero",

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year = "2019",

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doi = "10.1016/j.sse.2019.03.032",

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T1 - Comparison of source/drain electrodes in thin-film transistors based on room temperature deposited zinc nitride films

AU - Dominguez, Miguel A.

AU - Pau, Jose Luis

AU - Orduña-Diaz, Abdu

AU - Redondo-Cubero, Andres

PY - 2019/6

Y1 - 2019/6

N2 - In this work, the comparison of source/drain electrodes in thin film transistors (TFTs) based on room temperature deposited Zinc Nitride (Zn 3 N 2 ) films is presented. Aluminum and aluminum doped zinc oxide (AZO) films are used as electrodes. Both devices exhibit an on/off-current ratio of 10 4 and a subthreshold slope close to 1 V/Dec. The extracted field-effect mobility was 4.5 cm 2 /Vs and 1 cm 2 /Vs for TFTs using aluminum and AZO, respectively. Better electrical characteristics are achieved with aluminum electrodes. However, AZO electrodes made possible the fabrication of fully transparent Zn 3 N 2 TFTs, reported for first time in this work.

AB - In this work, the comparison of source/drain electrodes in thin film transistors (TFTs) based on room temperature deposited Zinc Nitride (Zn 3 N 2 ) films is presented. Aluminum and aluminum doped zinc oxide (AZO) films are used as electrodes. Both devices exhibit an on/off-current ratio of 10 4 and a subthreshold slope close to 1 V/Dec. The extracted field-effect mobility was 4.5 cm 2 /Vs and 1 cm 2 /Vs for TFTs using aluminum and AZO, respectively. Better electrical characteristics are achieved with aluminum electrodes. However, AZO electrodes made possible the fabrication of fully transparent Zn 3 N 2 TFTs, reported for first time in this work.

KW - AZO

KW - Spin-on glass

KW - Thin-film transistors

KW - Transparent devices

KW - Zinc nitride

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U2 - 10.1016/j.sse.2019.03.032

DO - 10.1016/j.sse.2019.03.032

M3 - Artículo

AN - SCOPUS:85062911504

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VL - 156

SP - 12

EP - 15

JO - Solid-State Electronics

JF - Solid-State Electronics

ER -

Comparison of source/drain electrodes in thin-film transistors based on room temperature deposited zinc nitride films

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Keywords

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