TY - JOUR
T1 - Comparison of parameter variation of InAs quantum dots embedded in GaAs/Al0.30Ga0.70As structures with different capping/buffer quantum wells at annealing
AU - Tamayo, R. Cisneros
AU - Torchynska, T. V.
AU - Polupan, G.
AU - Stintz, A.
N1 - Publisher Copyright:
© 2023, The Author(s), under exclusive licence to Springer Science+Business Media, LLC, part of Springer Nature.
PY - 2023/5
Y1 - 2023/5
N2 - The emission variation with annealing in GaAs/Al0.30Ga0.70As structures with quantum dots of InAs (QDs) located in different capping/buffer wells (QWs) is investigated. Two types of QD structures are compared: (i) Al0.10Ga0.75In0.15As capping and Ga0.85In0.15As buffer (#1) and (ii) Al0.40Ga0.45In0.15As capping and Ga0.75In0.25As buffer (#2) layers. QD structures were annealed at 640 °C or 710 °C for 2 hours in an argon atmosphere for estimation of their application temperature ranges. To reveal the variation of the QD and capping/buffer QW compositions, the investigations of QD emission and X-ray diffraction of high-resolution (HR-XRD) have been used. Furthermore, HR-XRD scans were modeled by numerical simulation with X’Pert Epitaxy software. The variation of the QD emission peaks against temperatures in the range of 10-400 K was also studied, allowing QD compositions to be monitored. The advantages of the studied QD structures have been compared and discussed in detail.
AB - The emission variation with annealing in GaAs/Al0.30Ga0.70As structures with quantum dots of InAs (QDs) located in different capping/buffer wells (QWs) is investigated. Two types of QD structures are compared: (i) Al0.10Ga0.75In0.15As capping and Ga0.85In0.15As buffer (#1) and (ii) Al0.40Ga0.45In0.15As capping and Ga0.75In0.25As buffer (#2) layers. QD structures were annealed at 640 °C or 710 °C for 2 hours in an argon atmosphere for estimation of their application temperature ranges. To reveal the variation of the QD and capping/buffer QW compositions, the investigations of QD emission and X-ray diffraction of high-resolution (HR-XRD) have been used. Furthermore, HR-XRD scans were modeled by numerical simulation with X’Pert Epitaxy software. The variation of the QD emission peaks against temperatures in the range of 10-400 K was also studied, allowing QD compositions to be monitored. The advantages of the studied QD structures have been compared and discussed in detail.
UR - http://www.scopus.com/inward/record.url?scp=85159222884&partnerID=8YFLogxK
U2 - 10.1007/s10854-023-10374-1
DO - 10.1007/s10854-023-10374-1
M3 - Artículo
AN - SCOPUS:85159222884
SN - 0957-4522
VL - 34
JO - Journal of Materials Science: Materials in Electronics
JF - Journal of Materials Science: Materials in Electronics
IS - 14
M1 - 1129
ER -