TY - JOUR
T1 - Comparison of CdS Thin Films Prepared by the Traditional and Shallow Chemical Bath Deposition Method
AU - Alvarado, Jose Alberto
AU - Ramírez-Velasco, S.
AU - Reyes-Gracia, A.
AU - Vigil-Galán, O.
AU - Hernández-Calderón, V.
AU - Cuapio, Rene Perez
AU - Roque, J.
AU - Arce-Plaza, A.
N1 - Publisher Copyright:
© 2022 Wiley-VCH GmbH.
PY - 2022/12
Y1 - 2022/12
N2 - Chemical bath deposition (CBD) is one of the most used methods for CdS thin films deposition, but nevertheless, the by-product from the reaction constitutes a source of gross contamination. To reduce these residues, shallow-CBD (S-CBD) is proposed as an alternative method. Albeit this method only requires 25% of solution compared to traditional-CBD (T-CDB), making this method suitable to be used in device fabrication technology. In this work, a comparison between both techniques idone through the optical (UV–vis), structural (X-ray diffraction), morphology (scanning electron microscopy), and electrical properties such as four-point resistivity and temperature–current dependence from CdS layers analysis, deposited by S-CBD and T-CBD, is reported.
AB - Chemical bath deposition (CBD) is one of the most used methods for CdS thin films deposition, but nevertheless, the by-product from the reaction constitutes a source of gross contamination. To reduce these residues, shallow-CBD (S-CBD) is proposed as an alternative method. Albeit this method only requires 25% of solution compared to traditional-CBD (T-CDB), making this method suitable to be used in device fabrication technology. In this work, a comparison between both techniques idone through the optical (UV–vis), structural (X-ray diffraction), morphology (scanning electron microscopy), and electrical properties such as four-point resistivity and temperature–current dependence from CdS layers analysis, deposited by S-CBD and T-CBD, is reported.
KW - CdS thin films
KW - chemical
KW - physical
KW - scalable
KW - shallow chemical bath deposition (S-CBD)
UR - http://www.scopus.com/inward/record.url?scp=85138997351&partnerID=8YFLogxK
U2 - 10.1002/crat.202200172
DO - 10.1002/crat.202200172
M3 - Artículo
AN - SCOPUS:85138997351
SN - 0232-1300
VL - 57
JO - Crystal Research and Technology
JF - Crystal Research and Technology
IS - 12
M1 - 2200172
ER -