The photoluminescence (PL) and its temperature dependences have been studied in MBE grown InAs quantum dots (QDs) embedded in Al0.3Ga0.7As/In0.15Ga0. 85As/AlxGa1-xInyAs quantum wells (QWs) in dependence on the composition of capping layers. Two types of capping layers (Al0.3Ga0.7As and Al0.40Ga0.45In0.15As) were investigated. Temperature dependences of PL peak positions in QDs have been analyzed in the range of 10-300K and compared with the temperature shrinkage of the band gap in the bulk InAs crystal. This permits to investigate the efficiency of the Ga(Al)/In inter diffusion processes between QDs and capping layers in dependence on the capping layer compositions. The band gap fitting parameters obtained for InAs QDs have been compared with known ones for the bulk InAs crystal. It is shown that the efficiency of the Ga(Al)/In inter diffusion is high in the QD structures with Al0.3Ga0.7As capping layer. Finally the reasons of higher thermal stability of the structure with Al0.40 Ga0.45 In 0.15 As capping layer have been analyzed and discussed. Copyright © Materials Research Society 2013.
Casas Espinola, J. L., Torchynska, T. V., Diosdado, L. D. C., & Polupan, G. (2013). Comparative study of photoluminescence variation in InAs quantum dots embedded in InAlGaAs quantum wells. Paper presented at Materials Research Society Symposium Proceedings, . https://doi.org/10.1557/opl.2013.298