Characterization of CBD–CdS nanocrystals doped with Co2+

Jorge I. Contreras-Rascón, Joel Díaz-Reyes, Mariana E. Linares-Avilés, Karla N. Rivera-Hernández, Miguel Galván-Arellano, José S. Arias-Cerón, Javier Martínez-Juárez

Research output: Contribution to journalArticlepeer-review

4 Scopus citations

Abstract

Co-doped CdS nanofilms are synthesised by chemical bath deposition growth technique at the temperature of 60 ± 2 °C. The cobalt molar fraction was ranged from 0 ≤ x ≤ 5.47, which was determined by energy-dispersive X-ray spectroscopy. The X-ray diffraction shows that the nanofilms are of CoS–CdS nanocomposites with individual CdS and CoS crystalline planes. The Co-doped CdS crystalline phase was zinc-blende that was determined by X-ray diffraction and confirmed by Raman spectroscopy. The average grain size of the CdS films was ranged from 2.56 to 1.67 nm that was determined by Debye–Scherrer equation from ZB (111) direction and it was confirmed by Wang equation and high resolution transmission electron microscopy (HRTEM). Raman scattering shows that the CdS lattice dynamics is characteristic of a bimodal behaviour, in which the first optical longitudinal mode denotes the characteristic peak at 305 cm−1 of the CdS nanocrystals that is associated with the cobalt incorporation. Nanofilms present two main bandgaps at ~ 2.56 and 3.80 eV, which are attributed to single CdS and quantum-confinement due to nanocrystals size. The increase in band gap with increase in cobalt concentration suggests intermetallic compound of CoS (Eg = 1.60 eV) with CdS (Eg = 2.44 eV). The CdS nanocrystals size was ranged from 2.46 to 1.81 nm that was determined from ZB (111) direction by Debye–Scherrer equation and confirmed by the Wang equation. The room-temperature photoluminescence of the Co-doped CdS presents well-resolved radiative bands associated to structural defects and with the quantum-confinement. For the Co-doped CdS the photoluminescence intensity increases indicate a high-passivation of the nanocrystals.

Original languageEnglish
Pages (from-to)19748-19756
Number of pages9
JournalJournal of Materials Science: Materials in Electronics
Volume29
Issue number23
DOIs
StatePublished - 1 Dec 2018

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