Characterization of Al0.047Ga0.953Sb layers grown on GaSb using reciprocal space maps

Primavera López-Salazar; Javier Martínez-Juárez; Gabriel Juárez-Díaz; Francisco De Anda-Salazar; Ramon Peña-Sierra; Arturo García Borquez; Alvaro David Hernández-De La Luz

doi:10.1016/j.matlet.2015.12.084

Characterization of Al_0.047Ga_0.953Sb layers grown on GaSb using reciprocal space maps

Primavera López-Salazar, Javier Martínez-Juárez, Gabriel Juárez-Díaz, Francisco De Anda-Salazar, Ramon Peña-Sierra, Arturo García Borquez, Alvaro David Hernández-De La Luz

Escuela Superior de Física y Matemáticas (ESFM)

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

Structures of Al_0.047Ga_0.953Sb layers on GaSb (100) substrates were studied by high resolution X-ray diffraction (HRXRD) using reciprocal space maps (RSM) and rocking curves around the (004) and (115) reflections. The layers were grown at 450 °C with a supersaturation of 10 °C in a conventional Liquid Phase Epitaxy (LPE) system varying the growth time from 1 to 4 min resulting in an increment of thickness. It was found that tilt, relaxation and dislocation density of the layers can be calculated using its rocking curves and reciprocal space mapping and it is found that these characteristics are influenced by the thickness of layer.

Original language	English
Pages (from-to)	239-242
Number of pages	4
Journal	Materials Letters
Volume	166
DOIs	https://doi.org/10.1016/j.matlet.2015.12.084
State	Published - 1 Mar 2016

Keywords

Epitaxial growth
GaSb based alloys
III-V compounds
Lattice relaxation
Layer tilt
Reciprocal space mapping

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10.1016/j.matlet.2015.12.084

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title = "Characterization of Al0.047Ga0.953Sb layers grown on GaSb using reciprocal space maps",

abstract = "Structures of Al0.047Ga0.953Sb layers on GaSb (100) substrates were studied by high resolution X-ray diffraction (HRXRD) using reciprocal space maps (RSM) and rocking curves around the (004) and (115) reflections. The layers were grown at 450 °C with a supersaturation of 10 °C in a conventional Liquid Phase Epitaxy (LPE) system varying the growth time from 1 to 4 min resulting in an increment of thickness. It was found that tilt, relaxation and dislocation density of the layers can be calculated using its rocking curves and reciprocal space mapping and it is found that these characteristics are influenced by the thickness of layer.",

keywords = "Epitaxial growth, GaSb based alloys, III-V compounds, Lattice relaxation, Layer tilt, Reciprocal space mapping",

author = "Primavera L{\'o}pez-Salazar and Javier Mart{\'i}nez-Ju{\'a}rez and Gabriel Ju{\'a}rez-D{\'i}az and {De Anda-Salazar}, Francisco and Ramon Pe{\~n}a-Sierra and {Garc{\'i}a Borquez}, Arturo and {Hern{\'a}ndez-De La Luz}, {Alvaro David}",

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doi = "10.1016/j.matlet.2015.12.084",

language = "Ingl{\'e}s",

volume = "166",

pages = "239--242",

journal = "Materials Letters",

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TY - JOUR

T1 - Characterization of Al0.047Ga0.953Sb layers grown on GaSb using reciprocal space maps

AU - López-Salazar, Primavera

AU - Martínez-Juárez, Javier

AU - Juárez-Díaz, Gabriel

AU - De Anda-Salazar, Francisco

AU - Peña-Sierra, Ramon

AU - García Borquez, Arturo

AU - Hernández-De La Luz, Alvaro David

PY - 2016/3/1

Y1 - 2016/3/1

N2 - Structures of Al0.047Ga0.953Sb layers on GaSb (100) substrates were studied by high resolution X-ray diffraction (HRXRD) using reciprocal space maps (RSM) and rocking curves around the (004) and (115) reflections. The layers were grown at 450 °C with a supersaturation of 10 °C in a conventional Liquid Phase Epitaxy (LPE) system varying the growth time from 1 to 4 min resulting in an increment of thickness. It was found that tilt, relaxation and dislocation density of the layers can be calculated using its rocking curves and reciprocal space mapping and it is found that these characteristics are influenced by the thickness of layer.

AB - Structures of Al0.047Ga0.953Sb layers on GaSb (100) substrates were studied by high resolution X-ray diffraction (HRXRD) using reciprocal space maps (RSM) and rocking curves around the (004) and (115) reflections. The layers were grown at 450 °C with a supersaturation of 10 °C in a conventional Liquid Phase Epitaxy (LPE) system varying the growth time from 1 to 4 min resulting in an increment of thickness. It was found that tilt, relaxation and dislocation density of the layers can be calculated using its rocking curves and reciprocal space mapping and it is found that these characteristics are influenced by the thickness of layer.

KW - Epitaxial growth

KW - GaSb based alloys

KW - III-V compounds

KW - Lattice relaxation

KW - Layer tilt

KW - Reciprocal space mapping

UR - http://www.scopus.com/inward/record.url?scp=84952815236&partnerID=8YFLogxK

U2 - 10.1016/j.matlet.2015.12.084

DO - 10.1016/j.matlet.2015.12.084

M3 - Artículo

SN - 0167-577X

VL - 166

SP - 239

EP - 242

JO - Materials Letters

JF - Materials Letters

ER -

Characterization of Al_0.047Ga_0.953Sb layers grown on GaSb using reciprocal space maps

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Keywords

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