Celdas solares de heterounión de CdS/CdTe. Parte 2. Celdas solares procesadas por las técnicas de erosión catódica magneto-planar y GREG

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Abstract

We present the processing and characterization of CdS/CdTe thin film solar cells depositing CdS by rf planar-magnetron sputtering and CdTe by the gradient recrystallization and growth, GREG technique. CdS was deposited on soda-lime LOF™ conducting glass substrates, then CdTe on CdS and Cu-Au contacts evaporated on the CdTe film. The films deposition parameters were: for CdS a 25 W rf power was used at 18 mtorr of Ar pressure and a substrate temperature TS of 380°C, while for CdTe a source temperature Tf between 570°C and 650°C and TS from 460°C to 480°C were used under a 500 mtorr Ar pressure. CdS and CdTe films were polycrystalline showing preferential orientation in the (002) direction for CdS and in the (111) direction for CdTe; grain size was 0.1 μm for CdS and 0.5-2 μm for CdTe. The photovoltaic parameters were determined yielding the best solar cell performance values of VOC = 0.74 V, ISC = 2.3 mA, ff = 55%, SQEmax = 0.7 electrons/photon at 600 nm and 8% solar energy conversion efficiency.
Original languageAmerican English
Pages (from-to)61-66
Number of pages54
JournalRevista Mexicana de Fisica
StatePublished - 1 Jan 1999

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solar cells
solar energy conversion
energy conversion efficiency
volatile organic compounds
calcium oxides
Substrates
Volatile organic compounds
Energy conversion
Lime
substrate
Magnetron sputtering
Solar energy
Conversion efficiency
electric contacts
Solar cells
magnetron sputtering
Photons
grain size
lime
volatile organic compound

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@article{513b28564e76478498f36d2f6b48db8b,
title = "Celdas solares de heterouni{\'o}n de CdS/CdTe. Parte 2. Celdas solares procesadas por las t{\'e}cnicas de erosi{\'o}n cat{\'o}dica magneto-planar y GREG",
abstract = "We present the processing and characterization of CdS/CdTe thin film solar cells depositing CdS by rf planar-magnetron sputtering and CdTe by the gradient recrystallization and growth, GREG technique. CdS was deposited on soda-lime LOF™ conducting glass substrates, then CdTe on CdS and Cu-Au contacts evaporated on the CdTe film. The films deposition parameters were: for CdS a 25 W rf power was used at 18 mtorr of Ar pressure and a substrate temperature TS of 380°C, while for CdTe a source temperature Tf between 570°C and 650°C and TS from 460°C to 480°C were used under a 500 mtorr Ar pressure. CdS and CdTe films were polycrystalline showing preferential orientation in the (002) direction for CdS and in the (111) direction for CdTe; grain size was 0.1 μm for CdS and 0.5-2 μm for CdTe. The photovoltaic parameters were determined yielding the best solar cell performance values of VOC = 0.74 V, ISC = 2.3 mA, ff = 55{\%}, SQEmax = 0.7 electrons/photon at 600 nm and 8{\%} solar energy conversion efficiency.",
author = "{Tufi{\~n}o Vel{\'a}zquez}, M. and {Contreras Puente}, G. and {Albor Aguilera}, {M. L.} and {Gonz{\'a}lez Trujillo}, {M. A.} and Compaan, {A. D.}",
year = "1999",
month = "1",
day = "1",
language = "American English",
pages = "61--66",
journal = "Revista Mexicana de Fisica",
issn = "0035-001X",
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T1 - Celdas solares de heterounión de CdS/CdTe. Parte 2. Celdas solares procesadas por las técnicas de erosión catódica magneto-planar y GREG

AU - Tufiño Velázquez, M.

AU - Contreras Puente, G.

AU - Albor Aguilera, M. L.

AU - González Trujillo, M. A.

AU - Compaan, A. D.

PY - 1999/1/1

Y1 - 1999/1/1

N2 - We present the processing and characterization of CdS/CdTe thin film solar cells depositing CdS by rf planar-magnetron sputtering and CdTe by the gradient recrystallization and growth, GREG technique. CdS was deposited on soda-lime LOF™ conducting glass substrates, then CdTe on CdS and Cu-Au contacts evaporated on the CdTe film. The films deposition parameters were: for CdS a 25 W rf power was used at 18 mtorr of Ar pressure and a substrate temperature TS of 380°C, while for CdTe a source temperature Tf between 570°C and 650°C and TS from 460°C to 480°C were used under a 500 mtorr Ar pressure. CdS and CdTe films were polycrystalline showing preferential orientation in the (002) direction for CdS and in the (111) direction for CdTe; grain size was 0.1 μm for CdS and 0.5-2 μm for CdTe. The photovoltaic parameters were determined yielding the best solar cell performance values of VOC = 0.74 V, ISC = 2.3 mA, ff = 55%, SQEmax = 0.7 electrons/photon at 600 nm and 8% solar energy conversion efficiency.

AB - We present the processing and characterization of CdS/CdTe thin film solar cells depositing CdS by rf planar-magnetron sputtering and CdTe by the gradient recrystallization and growth, GREG technique. CdS was deposited on soda-lime LOF™ conducting glass substrates, then CdTe on CdS and Cu-Au contacts evaporated on the CdTe film. The films deposition parameters were: for CdS a 25 W rf power was used at 18 mtorr of Ar pressure and a substrate temperature TS of 380°C, while for CdTe a source temperature Tf between 570°C and 650°C and TS from 460°C to 480°C were used under a 500 mtorr Ar pressure. CdS and CdTe films were polycrystalline showing preferential orientation in the (002) direction for CdS and in the (111) direction for CdTe; grain size was 0.1 μm for CdS and 0.5-2 μm for CdTe. The photovoltaic parameters were determined yielding the best solar cell performance values of VOC = 0.74 V, ISC = 2.3 mA, ff = 55%, SQEmax = 0.7 electrons/photon at 600 nm and 8% solar energy conversion efficiency.

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