CdTe:Bi films deposited by closed space vapor transport under variable pressure and doping levels: Evidences of the possible formation of an intermediate band

O. Vigil-Galán; Maykel Courel; F. Cruz-Gandarilla; D. Seuret-Jiménez

doi:10.1007/s10854-016-4534-1

CdTe:Bi films deposited by closed space vapor transport under variable pressure and doping levels: Evidences of the possible formation of an intermediate band

O. Vigil-Galán, Maykel Courel, F. Cruz-Gandarilla, D. Seuret-Jiménez

Escuela Superior de Física y Matemáticas (ESFM)

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Abstract

In this work, the results about the properties of CdTe:Bi thin films grown by the Closed Space Vapor Transport (CSVT) method are presented. Two procedures were developed for the CdTe:Bi films deposition: (a) using powders with different Bi concentrations at a constant pressure in the CSVT chamber and (b) varying the total final Ar pressure in the CSVT chamber. The CdTe powders used in our experimental conditions were obtained by using CdTe:Bi crystals grown by the vertical Bridgman method, varying the nominal Bi-dopant concentration in the 1.0 × 10¹⁷ to 4 × 10¹⁹ at/cm³ range. Finally, the possible influence of both parameters on the existence of an intermediate band in CdTe:Bi thin films and CdS/CdTe solar cell characteristics is analyzed.

Original language	English
Pages (from-to)	6088-6095
Number of pages	8
Journal	Journal of Materials Science: Materials in Electronics
Volume	27
Issue number	6
DOIs	https://doi.org/10.1007/s10854-016-4534-1
State	Published - Jun 2016

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10.1007/s10854-016-4534-1

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title = "CdTe:Bi films deposited by closed space vapor transport under variable pressure and doping levels: Evidences of the possible formation of an intermediate band",

abstract = "In this work, the results about the properties of CdTe:Bi thin films grown by the Closed Space Vapor Transport (CSVT) method are presented. Two procedures were developed for the CdTe:Bi films deposition: (a) using powders with different Bi concentrations at a constant pressure in the CSVT chamber and (b) varying the total final Ar pressure in the CSVT chamber. The CdTe powders used in our experimental conditions were obtained by using CdTe:Bi crystals grown by the vertical Bridgman method, varying the nominal Bi-dopant concentration in the 1.0 × 1017 to 4 × 1019 at/cm3 range. Finally, the possible influence of both parameters on the existence of an intermediate band in CdTe:Bi thin films and CdS/CdTe solar cell characteristics is analyzed.",

author = "O. Vigil-Gal{\'a}n and Maykel Courel and F. Cruz-Gandarilla and D. Seuret-Jim{\'e}nez",

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CdTe:Bi films deposited by closed space vapor transport under variable pressure and doping levels: Evidences of the possible formation of an intermediate band. / Vigil-Galán, O.; Courel, Maykel; Cruz-Gandarilla, F. et al.
In: Journal of Materials Science: Materials in Electronics, Vol. 27, No. 6, 06.2016, p. 6088-6095.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - CdTe:Bi films deposited by closed space vapor transport under variable pressure and doping levels

T2 - Evidences of the possible formation of an intermediate band

AU - Vigil-Galán, O.

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AU - Cruz-Gandarilla, F.

AU - Seuret-Jiménez, D.

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N2 - In this work, the results about the properties of CdTe:Bi thin films grown by the Closed Space Vapor Transport (CSVT) method are presented. Two procedures were developed for the CdTe:Bi films deposition: (a) using powders with different Bi concentrations at a constant pressure in the CSVT chamber and (b) varying the total final Ar pressure in the CSVT chamber. The CdTe powders used in our experimental conditions were obtained by using CdTe:Bi crystals grown by the vertical Bridgman method, varying the nominal Bi-dopant concentration in the 1.0 × 1017 to 4 × 1019 at/cm3 range. Finally, the possible influence of both parameters on the existence of an intermediate band in CdTe:Bi thin films and CdS/CdTe solar cell characteristics is analyzed.

AB - In this work, the results about the properties of CdTe:Bi thin films grown by the Closed Space Vapor Transport (CSVT) method are presented. Two procedures were developed for the CdTe:Bi films deposition: (a) using powders with different Bi concentrations at a constant pressure in the CSVT chamber and (b) varying the total final Ar pressure in the CSVT chamber. The CdTe powders used in our experimental conditions were obtained by using CdTe:Bi crystals grown by the vertical Bridgman method, varying the nominal Bi-dopant concentration in the 1.0 × 1017 to 4 × 1019 at/cm3 range. Finally, the possible influence of both parameters on the existence of an intermediate band in CdTe:Bi thin films and CdS/CdTe solar cell characteristics is analyzed.

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CdTe:Bi films deposited by closed space vapor transport under variable pressure and doping levels: Evidences of the possible formation of an intermediate band

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