TY - JOUR
T1 - CdTe and CdMTe (M = Fe, In, Sb) thin film studies by Mössbauer spectroscopy and other techniques
AU - Sánchez-Sinencio, Feliciano
AU - Mendoza-alvarez, J. G.
AU - Zelaya, O.
AU - Herrera, Alberto
AU - Larios, Francisco
AU - Alvarez Fregoso, O.
AU - Figueroa, J. M.
AU - Contreras-Puente, G.
AU - Díaz Góngora, A.
AU - Galvao da Silva, E.
AU - Scorzelli, R. B.
AU - Farías, M. H.
AU - Cota-Araiza, L.
AU - Soto, G.
N1 - Funding Information:
We thank Dr. Leticia Bafios from the Instituto de Investigaci6n de Materiales, UNAM (Mexico), for her very helpful assistance in the X-ray measurements. This work was partially supported by DGICSA-SEP (Mexico), the cooperation agreement between CNPq (Brazil) and CONACyT (Mexico), the Organization of American States and Finep (Brazil).
PY - 1990
Y1 - 1990
N2 - Non-destructive characterization of the atomic and electronic structures hasbeen carried out for CdTe and CdMTe (M = Fe, In or Sb) thin films. These films were grown either by sputtering or by close-spaced vapour transport techniques. Characterization was performed using the time-of-flight technique and four spectroscopies: Mössbauer, X-ray diffraction, Auger electron and photoluminescence. Different kinds of compound materials can be obtained when CdTe and indium (or antimony) are co-sputtered. A monotonic increase in indium concentration leads to the successive formation of Cd0.83In0.34Te1.34, CdIn2Te4 and InTe; we demonstrate the role of indium substituting for cadmium. A monotonic increase in antimony in CdSbTe films leads to amorphization of its atomic structure; it is probable that antimony has an amphoteric behaviour, with nearly equal chances of substituting for either cadmium or tellurium in the CdTe lattice. The ionicity of iron was used in order to determine the amorphous: crystalline ratio in CdFeTe films. Finally, low temperature photoluminescence, measured in CdTe polycrystalline films, is compared with electron and hole lateral mobilities measured on the same films. This comparison shows that the intracrystalline and/or intercrystalline density of defects is larger in large grain films than in small grain films. In any case, charge carrier (both electrons and holes) transport in the films is a trap-controlled process.
AB - Non-destructive characterization of the atomic and electronic structures hasbeen carried out for CdTe and CdMTe (M = Fe, In or Sb) thin films. These films were grown either by sputtering or by close-spaced vapour transport techniques. Characterization was performed using the time-of-flight technique and four spectroscopies: Mössbauer, X-ray diffraction, Auger electron and photoluminescence. Different kinds of compound materials can be obtained when CdTe and indium (or antimony) are co-sputtered. A monotonic increase in indium concentration leads to the successive formation of Cd0.83In0.34Te1.34, CdIn2Te4 and InTe; we demonstrate the role of indium substituting for cadmium. A monotonic increase in antimony in CdSbTe films leads to amorphization of its atomic structure; it is probable that antimony has an amphoteric behaviour, with nearly equal chances of substituting for either cadmium or tellurium in the CdTe lattice. The ionicity of iron was used in order to determine the amorphous: crystalline ratio in CdFeTe films. Finally, low temperature photoluminescence, measured in CdTe polycrystalline films, is compared with electron and hole lateral mobilities measured on the same films. This comparison shows that the intracrystalline and/or intercrystalline density of defects is larger in large grain films than in small grain films. In any case, charge carrier (both electrons and holes) transport in the films is a trap-controlled process.
UR - http://www.scopus.com/inward/record.url?scp=0025627893&partnerID=8YFLogxK
U2 - 10.1016/S0040-6090(05)80048-3
DO - 10.1016/S0040-6090(05)80048-3
M3 - Artículo
SN - 0040-6090
VL - 193-194
SP - 382
EP - 394
JO - Thin Solid Films
JF - Thin Solid Films
IS - PART 1
ER -