TY - GEN
T1 - BPFET-based RF electronics
T2 - 2020 IEEE MTT-S Latin America Microwave Conference, LAMC 2020
AU - Valdez-Sandoval, Leslie
AU - Pacheco-Sanchez, Anibal
AU - Jimenez, David
AU - Ramirez-Garcia, Eloy
N1 - Publisher Copyright:
© 2021 IEEE.
PY - 2020
Y1 - 2020
N2 - Black phosphorus (BP) field-effect transistors (FET) have been proposed as a two-dimensional channel device technology able to operate in radiofrequency (RF) applications. A revision of the high-frequency figures of merit of fabricated BPFETs is provided here. Experimentally-calibrated small-signal models of state-of-the-art RF BPFETs have been used to design single- and double-stage amplifiers at 2.4 GHz. Results show that BPFET-based amplifiers are strong candidates for low-power high-selective RF systems.
AB - Black phosphorus (BP) field-effect transistors (FET) have been proposed as a two-dimensional channel device technology able to operate in radiofrequency (RF) applications. A revision of the high-frequency figures of merit of fabricated BPFETs is provided here. Experimentally-calibrated small-signal models of state-of-the-art RF BPFETs have been used to design single- and double-stage amplifiers at 2.4 GHz. Results show that BPFET-based amplifiers are strong candidates for low-power high-selective RF systems.
KW - BPFET
KW - RF amplifier
KW - Small-signal model
UR - http://www.scopus.com/inward/record.url?scp=85123441203&partnerID=8YFLogxK
U2 - 10.1109/LAMC50424.2021.9601637
DO - 10.1109/LAMC50424.2021.9601637
M3 - Contribución a la conferencia
AN - SCOPUS:85123441203
T3 - 2020 IEEE MTT-S Latin America Microwave Conference, LAMC 2020
BT - 2020 IEEE MTT-S Latin America Microwave Conference, LAMC 2020
PB - Institute of Electrical and Electronics Engineers Inc.
Y2 - 26 May 2021 through 28 May 2021
ER -