Bi doped CdTe: Increasing potentialities of CdTe based solar cells

C. M. Ruiz, O. Vigil, E. Saucedo, G. Contreras-Puente, V. Bermúdez

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Abstract

CdTe films were deposited by closed space sublimation from different CdTe:Bi targets (from non-doped up to 0.16at.%) previously sintered by the Bridgman method. X-ray diffraction measurements demonstrate that CdTe films are formed and Bi is incorporated. Electrical and optical characterizations show that thin films reproduce the bulk material behaviour with a decrease in resistivity and an increase in photoconductivity. Also a limit is found in the increase of photoconductivity properties versus Bi concentration. © 2006 IOP Publishing Ltd.
Original languageAmerican English
Pages (from-to)7163-7169
Number of pages6446
JournalJournal of Physics Condensed Matter
DOIs
StatePublished - 9 Aug 2006

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