Abstract
An investigation was made of the excitation spectra of a hole luminescence band due to photosensitivity (r) centers, and also of the photocurrent and photo-emf spectra of CdS:Cu and CdS:Li crystals. The excitation mechanism of the hole luminescence band was deduced from an analysis of the experimental observations: it was concluded that this mechanism involved the transfer of energy from an excited donor-acceptor pair to a hole at a neighboring r center (Auger process). This mechanism made it possible to explain why the intensity of the hole luminescence band was higher than that of an electron band associated with the same centers.
| Original language | English |
|---|---|
| Pages (from-to) | 1380-1382 |
| Number of pages | 3 |
| Journal | Soviet physics. Semiconductors |
| Volume | 11 |
| Issue number | 12 |
| State | Published - 1977 |