Assessment of the possibility to couple a photo sensor to a Floating-gate MOS transistor

S. Dominguez-Sanchez, S. Mendoza-Acevedo, M. A. Reyes-Barranca, L. M. Nava-Flores, J. A. Moreno-Cadenas

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

This paper presents preliminary results from experiments directed to demonstrate novel approximations that can lead to new applications for Floating-gate MOS transistors (FGMOS). This device began to be used in the ′60s in digital and analog configurations in a variety of reliable applications, either supported on the non-volatile or volatile property of this transistor. This is achieved by injecting/extracting charge to/from the floating gate through electrical mechanisms like Fowler-Nordheim Tunneling (FNT) or Channel Hot Electrons (CHE). This work shows that the same as with the mentioned mechanisms, I-V characteristics can also be modulated with physical rather than electrical phenomena, like the photonic one, among others. A simple amplifier configuration was used, using discrete components like a small solar cells module and an integrated photo sensor. After measurement of the corresponding transfer curve of the amplifier, a curve shift was obtained thanks to the VOC generated in the discrete device after illumination of the components, giving support to the hypothesis considered in this work, which can lead to a research work where integrated FGMOS transistors can be coupled to an integrated photo sensor, using a standard CMOS technology.

Original languageEnglish
Title of host publication2016 13th International Conference on Electrical Engineering, Computing Science and Automatic Control, CCE 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781509035106
DOIs
StatePublished - 21 Nov 2016
Event13th International Conference on Electrical Engineering, Computing Science and Automatic Control, CCE 2016 - Mexico City, Mexico
Duration: 26 Sep 201630 Sep 2016

Publication series

Name2016 13th International Conference on Electrical Engineering,Computing Science and Automatic Control, CCE 2016

Conference

Conference13th International Conference on Electrical Engineering, Computing Science and Automatic Control, CCE 2016
Country/TerritoryMexico
CityMexico City
Period26/09/1630/09/16

Keywords

  • FGMOS
  • PSPICE simulation
  • photo diode

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