An EPR investigation of SiOx films with columnar structure

V. Bratus'; I. Indutnyi; P. Shepeliavyi; T. Torchynska

doi:10.1016/j.physb.2013.11.060

An EPR investigation of SiO_x films with columnar structure

V. Bratus', I. Indutnyi, P. Shepeliavyi, T. Torchynska

Escuela Superior de Física y Matemáticas (ESFM)

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

The results of electron paramagnetic resonance (EPR) study of obliquely deposited porous SiO_x films before and after thermal annealing in vacuum at 950 °C are presented. The low intensity slightly asymmetrical and featureless EPR line with a g-value of 2.0044 and a linewidth of 0.77 mT has been detected in as-sputtered films and attributed to dangling bonds of silicon atoms in amorphous SiO_x domains with x=0.8. Successive annealing results in decreasing this line and the appearance of an intense EPR line with g=2.0025, linewidth of 0.11 mT and a hyperfine doublet with 1.6 mT splitting. According to the parameters this spectrum has been attributed to the EX center, a hole delocalized over four non-bridging oxygen atoms grouped around a Si vacancy in SiO₂. The impact of chemical treatment before annealing and duration of anneals on the defect system is discussed.

Original language	English
Pages (from-to)	26-28
Number of pages	3
Journal	Physica B: Condensed Matter
Volume	453
DOIs	https://doi.org/10.1016/j.physb.2013.11.060
State	Published - 2014

Keywords

EPR
EX center
Paramagnetic defects
Porous SiO films

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10.1016/j.physb.2013.11.060

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title = "An EPR investigation of SiOx films with columnar structure",

abstract = "The results of electron paramagnetic resonance (EPR) study of obliquely deposited porous SiOx films before and after thermal annealing in vacuum at 950 °C are presented. The low intensity slightly asymmetrical and featureless EPR line with a g-value of 2.0044 and a linewidth of 0.77 mT has been detected in as-sputtered films and attributed to dangling bonds of silicon atoms in amorphous SiOx domains with x=0.8. Successive annealing results in decreasing this line and the appearance of an intense EPR line with g=2.0025, linewidth of 0.11 mT and a hyperfine doublet with 1.6 mT splitting. According to the parameters this spectrum has been attributed to the EX center, a hole delocalized over four non-bridging oxygen atoms grouped around a Si vacancy in SiO2. The impact of chemical treatment before annealing and duration of anneals on the defect system is discussed.",

keywords = "EPR, EX center, Paramagnetic defects, Porous SiO films",

author = "V. Bratus' and I. Indutnyi and P. Shepeliavyi and T. Torchynska",

year = "2014",

doi = "10.1016/j.physb.2013.11.060",

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volume = "453",

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journal = "Physica B: Condensed Matter",

issn = "0921-4526",

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TY - JOUR

T1 - An EPR investigation of SiOx films with columnar structure

AU - Bratus', V.

AU - Indutnyi, I.

AU - Shepeliavyi, P.

AU - Torchynska, T.

PY - 2014

Y1 - 2014

N2 - The results of electron paramagnetic resonance (EPR) study of obliquely deposited porous SiOx films before and after thermal annealing in vacuum at 950 °C are presented. The low intensity slightly asymmetrical and featureless EPR line with a g-value of 2.0044 and a linewidth of 0.77 mT has been detected in as-sputtered films and attributed to dangling bonds of silicon atoms in amorphous SiOx domains with x=0.8. Successive annealing results in decreasing this line and the appearance of an intense EPR line with g=2.0025, linewidth of 0.11 mT and a hyperfine doublet with 1.6 mT splitting. According to the parameters this spectrum has been attributed to the EX center, a hole delocalized over four non-bridging oxygen atoms grouped around a Si vacancy in SiO2. The impact of chemical treatment before annealing and duration of anneals on the defect system is discussed.

AB - The results of electron paramagnetic resonance (EPR) study of obliquely deposited porous SiOx films before and after thermal annealing in vacuum at 950 °C are presented. The low intensity slightly asymmetrical and featureless EPR line with a g-value of 2.0044 and a linewidth of 0.77 mT has been detected in as-sputtered films and attributed to dangling bonds of silicon atoms in amorphous SiOx domains with x=0.8. Successive annealing results in decreasing this line and the appearance of an intense EPR line with g=2.0025, linewidth of 0.11 mT and a hyperfine doublet with 1.6 mT splitting. According to the parameters this spectrum has been attributed to the EX center, a hole delocalized over four non-bridging oxygen atoms grouped around a Si vacancy in SiO2. The impact of chemical treatment before annealing and duration of anneals on the defect system is discussed.

KW - EPR

KW - EX center

KW - Paramagnetic defects

KW - Porous SiO films

UR - http://www.scopus.com/inward/record.url?scp=84907807118&partnerID=8YFLogxK

U2 - 10.1016/j.physb.2013.11.060

DO - 10.1016/j.physb.2013.11.060

M3 - Artículo

SN - 0921-4526

VL - 453

SP - 26

EP - 28

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

ER -

An EPR investigation of SiO_x films with columnar structure

Abstract

Keywords

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