AlGaInAs capping layer impact on emission and structure of AlGaAs/GaAs quantum wells with InAs quantum dots

R. Cisneros Tamayo, G. Polupan, T. V. Torchynska, L. G. Vega-Macotela, A. Stintz, A. Escobosa Echavarria

Research output: Contribution to journalArticleResearchpeer-review

Abstract

© 2018 Three types of GaAs/Al0.30Ga0.70As quantum wells (QWs) with InAs quantum dots (QDs) cavered by the different capping layers: GaAs (#1), Al0.30Ga0.70As (#2) and Al0.1Ga0.75In0.15As (#3), have been investigated. The photoluminescence (PL), its temperature dependence and high resolution X-ray diffraction (HR-XRD) methods were applied. It is revealed that QD emission in the structure #3 is characterized by the lower PL peak energy, highest PL intensity and smaller half widths of PL bands, in comparison with the QD emissions in #1 and #2. PL temperature dependences have been studied that revealing the QD material composition in #3 is closer to InAs than those in #1 and #2. HR-XRD scan fitting permits to understand the process of strain relaxation in studied structures at high QW growth temperatures. This process in the structures #1 and #2 was connected with material composition varying the QDs and capping layers due to Ga/In atom intermixing that leads to the QD emission shift into the higher energy range and PL intensity decreasing. Meanwhile in the structure #3 with Al0.1Ga0.75In0.15As capping, the strain relaxation manifests itself by InAs QD height decreasing without changing the InAs QD material composition. The advantages of Al0.1Ga0.75In0.15As capping layer used and its impact on the emission of InAs QDs have been discussed.
Original languageAmerican English
Pages (from-to)212-218
Number of pages190
JournalMaterials Science in Semiconductor Processing
DOIs
StatePublished - 1 Feb 2019

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Semiconductor quantum wells
Semiconductor quantum dots
aluminum gallium arsenides
quantum dots
quantum wells
Photoluminescence
photoluminescence
Strain relaxation
Chemical analysis
indium arsenide
gallium arsenide
X ray diffraction
temperature dependence
high resolution
Growth temperature
diffraction
x rays
Atoms
Temperature
energy

Cite this

@article{31e4525d28c444f0b540a26cda41efde,
title = "AlGaInAs capping layer impact on emission and structure of AlGaAs/GaAs quantum wells with InAs quantum dots",
abstract = "{\circledC} 2018 Three types of GaAs/Al0.30Ga0.70As quantum wells (QWs) with InAs quantum dots (QDs) cavered by the different capping layers: GaAs (#1), Al0.30Ga0.70As (#2) and Al0.1Ga0.75In0.15As (#3), have been investigated. The photoluminescence (PL), its temperature dependence and high resolution X-ray diffraction (HR-XRD) methods were applied. It is revealed that QD emission in the structure #3 is characterized by the lower PL peak energy, highest PL intensity and smaller half widths of PL bands, in comparison with the QD emissions in #1 and #2. PL temperature dependences have been studied that revealing the QD material composition in #3 is closer to InAs than those in #1 and #2. HR-XRD scan fitting permits to understand the process of strain relaxation in studied structures at high QW growth temperatures. This process in the structures #1 and #2 was connected with material composition varying the QDs and capping layers due to Ga/In atom intermixing that leads to the QD emission shift into the higher energy range and PL intensity decreasing. Meanwhile in the structure #3 with Al0.1Ga0.75In0.15As capping, the strain relaxation manifests itself by InAs QD height decreasing without changing the InAs QD material composition. The advantages of Al0.1Ga0.75In0.15As capping layer used and its impact on the emission of InAs QDs have been discussed.",
author = "{Cisneros Tamayo}, R. and G. Polupan and Torchynska, {T. V.} and Vega-Macotela, {L. G.} and A. Stintz and {Escobosa Echavarria}, A.",
year = "2019",
month = "2",
day = "1",
doi = "10.1016/j.mssp.2018.10.024",
language = "American English",
pages = "212--218",
journal = "Materials Science in Semiconductor Processing",
issn = "1369-8001",
publisher = "Elsevier Ltd",

}

AlGaInAs capping layer impact on emission and structure of AlGaAs/GaAs quantum wells with InAs quantum dots. / Cisneros Tamayo, R.; Polupan, G.; Torchynska, T. V.; Vega-Macotela, L. G.; Stintz, A.; Escobosa Echavarria, A.

In: Materials Science in Semiconductor Processing, 01.02.2019, p. 212-218.

Research output: Contribution to journalArticleResearchpeer-review

TY - JOUR

T1 - AlGaInAs capping layer impact on emission and structure of AlGaAs/GaAs quantum wells with InAs quantum dots

AU - Cisneros Tamayo, R.

AU - Polupan, G.

AU - Torchynska, T. V.

AU - Vega-Macotela, L. G.

AU - Stintz, A.

AU - Escobosa Echavarria, A.

PY - 2019/2/1

Y1 - 2019/2/1

N2 - © 2018 Three types of GaAs/Al0.30Ga0.70As quantum wells (QWs) with InAs quantum dots (QDs) cavered by the different capping layers: GaAs (#1), Al0.30Ga0.70As (#2) and Al0.1Ga0.75In0.15As (#3), have been investigated. The photoluminescence (PL), its temperature dependence and high resolution X-ray diffraction (HR-XRD) methods were applied. It is revealed that QD emission in the structure #3 is characterized by the lower PL peak energy, highest PL intensity and smaller half widths of PL bands, in comparison with the QD emissions in #1 and #2. PL temperature dependences have been studied that revealing the QD material composition in #3 is closer to InAs than those in #1 and #2. HR-XRD scan fitting permits to understand the process of strain relaxation in studied structures at high QW growth temperatures. This process in the structures #1 and #2 was connected with material composition varying the QDs and capping layers due to Ga/In atom intermixing that leads to the QD emission shift into the higher energy range and PL intensity decreasing. Meanwhile in the structure #3 with Al0.1Ga0.75In0.15As capping, the strain relaxation manifests itself by InAs QD height decreasing without changing the InAs QD material composition. The advantages of Al0.1Ga0.75In0.15As capping layer used and its impact on the emission of InAs QDs have been discussed.

AB - © 2018 Three types of GaAs/Al0.30Ga0.70As quantum wells (QWs) with InAs quantum dots (QDs) cavered by the different capping layers: GaAs (#1), Al0.30Ga0.70As (#2) and Al0.1Ga0.75In0.15As (#3), have been investigated. The photoluminescence (PL), its temperature dependence and high resolution X-ray diffraction (HR-XRD) methods were applied. It is revealed that QD emission in the structure #3 is characterized by the lower PL peak energy, highest PL intensity and smaller half widths of PL bands, in comparison with the QD emissions in #1 and #2. PL temperature dependences have been studied that revealing the QD material composition in #3 is closer to InAs than those in #1 and #2. HR-XRD scan fitting permits to understand the process of strain relaxation in studied structures at high QW growth temperatures. This process in the structures #1 and #2 was connected with material composition varying the QDs and capping layers due to Ga/In atom intermixing that leads to the QD emission shift into the higher energy range and PL intensity decreasing. Meanwhile in the structure #3 with Al0.1Ga0.75In0.15As capping, the strain relaxation manifests itself by InAs QD height decreasing without changing the InAs QD material composition. The advantages of Al0.1Ga0.75In0.15As capping layer used and its impact on the emission of InAs QDs have been discussed.

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U2 - 10.1016/j.mssp.2018.10.024

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