Atomic force microscopy and Fourier transform infrared spectroscopy were used to investigate the morphology of the microcrystalline surface, and also the amorphous-crystalline structural transformation of a-Si: H films, isothermally annealed during several hours. Crystallization process was strongly influenced by the deposition of an Al layer on the surface of a-Si:H samples. Representative AFM images show the presence of grains, which increase in diameter with the annealing time. Relative crystallized fraction as a function of the annealing time can be described adequately by using the Avrami equation. The kinetic of this crystallization process suggest a two-dimensional growth of the Si nuclei. Fourier transform infrared measurements show the presence of an intense band near 512 cm -1 associated to Si-Si bonding. We observed the relative diminishing of the intensity of the Si-H wagging mode at 694 cm -1 with annealing time, suggesting effusion of hydrogen to the surface of microcrystalline films. © 2007 WILEY-VCH Verlag GmbH & Co. KGaA.
|Original language||American English|
|Number of pages||912|
|State||Published - 1 Apr 2007|
|Event||Physica Status Solidi (A) Applications and Materials Science - |
Duration: 1 Apr 2007 → …
|Conference||Physica Status Solidi (A) Applications and Materials Science|
|Period||1/04/07 → …|