AFM and FTIR characterization of microcrystalline Si obtained from isothermal annealing of Al/a-Si:H

M. Rojas-López, A. Orduña-Díaz, R. Delgado-Macuil, J. Olvera-Hernández, H. Navarro-Contreras, M. A. Vidal, N. Saucedo, V. H. Mendez-García

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Abstract

Atomic force microscopy and Fourier transform infrared spectroscopy were used to investigate the morphology of the microcrystalline surface, and also the amorphous-crystalline structural transformation of a-Si: H films, isothermally annealed during several hours. Crystallization process was strongly influenced by the deposition of an Al layer on the surface of a-Si:H samples. Representative AFM images show the presence of grains, which increase in diameter with the annealing time. Relative crystallized fraction as a function of the annealing time can be described adequately by using the Avrami equation. The kinetic of this crystallization process suggest a two-dimensional growth of the Si nuclei. Fourier transform infrared measurements show the presence of an intense band near 512 cm -1 associated to Si-Si bonding. We observed the relative diminishing of the intensity of the Si-H wagging mode at 694 cm -1 with annealing time, suggesting effusion of hydrogen to the surface of microcrystalline films. © 2007 WILEY-VCH Verlag GmbH & Co. KGaA.
Original languageAmerican English
Pages1014-1017
Number of pages912
DOIs
StatePublished - 1 Apr 2007
EventPhysica Status Solidi (A) Applications and Materials Science -
Duration: 1 Apr 2007 → …

Conference

ConferencePhysica Status Solidi (A) Applications and Materials Science
Period1/04/07 → …

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