TY - JOUR
T1 - A Small-Signal Description of Black-Phosphorus Transistor Technologies for High-Frequency Applications
AU - Valdez-Sandoval, Leslie M.
AU - Ramírez-García, Eloy
AU - Park, Saungeun
AU - Akinwande, Deji
AU - Jiménez, David
AU - Pacheco-Sanchez, Anibal
N1 - Publisher Copyright:
© 2001-2012 IEEE.
PY - 2021/9
Y1 - 2021/9
N2 - This work presents a small-signal high-frequency (HF) equivalent circuit (EC) to model AC performances of black-phosphorus field-effect transistors (BPFETs). The proposed EC is able to describe correctly both the experimental HF intrinsic and extrinsic figures of merit, as well as S-parameters, from different BPFET technologies. Single- and double-stage radio frequency gain amplifiers are designed at 2.4 GHz using the experimentally calibrated small-signal BPFET EC. Results show high-gain high-selective BPFET-based amplifiers.
AB - This work presents a small-signal high-frequency (HF) equivalent circuit (EC) to model AC performances of black-phosphorus field-effect transistors (BPFETs). The proposed EC is able to describe correctly both the experimental HF intrinsic and extrinsic figures of merit, as well as S-parameters, from different BPFET technologies. Single- and double-stage radio frequency gain amplifiers are designed at 2.4 GHz using the experimentally calibrated small-signal BPFET EC. Results show high-gain high-selective BPFET-based amplifiers.
KW - Black-phosphorus field-effect transistor (BPFET)
KW - RF amplifier
KW - small-signal
UR - http://www.scopus.com/inward/record.url?scp=85107380830&partnerID=8YFLogxK
U2 - 10.1109/LMWC.2021.3086047
DO - 10.1109/LMWC.2021.3086047
M3 - Artículo
AN - SCOPUS:85107380830
SN - 1531-1309
VL - 31
SP - 1055
EP - 1058
JO - IEEE Microwave and Wireless Components Letters
JF - IEEE Microwave and Wireless Components Letters
IS - 9
M1 - 9446518
ER -