A-Si:H crystallization from isothermal annealing and its dependence on the substrate used

    Research output: Contribution to conferencePaper

    2 Scopus citations

    Abstract

    We present hydrogenated amorphous silicon (a-Si:H) films which were deposited on two different substrates (glass and mono-crystalline silicon) after an isothermal annealing treatment at 250 °C for up to 14 h. The annealed amorphous films were analyzed using atomic force microscopy, Raman and FTIR spectroscopy. Films deposited on glass substrate experienced an amorphous-crystalline phase transition after annealing because of the metal-induced crystallization effect, reaching approximately 70% conversion after 14 h of annealing. An absorption frequency of the TO-phonon mode that varies systematically with the substoichiometry of the silicon oxide in the 1046-1170 cm-1 region was observed, revealing the reactivity of the film with the annealing time. For similar annealing time, films deposited on mono-crystalline silicon substrate remained mainly amorphous with minimal Si-crystalline formation. Therefore, the crystalline formations and the shape of the films surfaces depends on the annealing time as well as on the substrate employed during the deposition process of the a-Si:H film. © 2010 Elsevier B.V. All rights reserved.
    Original languageAmerican English
    Pages137-140
    Number of pages122
    DOIs
    StatePublished - 25 Oct 2010
    EventMaterials Science and Engineering B: Solid-State Materials for Advanced Technology -
    Duration: 25 Oct 2010 → …

    Conference

    ConferenceMaterials Science and Engineering B: Solid-State Materials for Advanced Technology
    Period25/10/10 → …

    Fingerprint

    Dive into the research topics of 'A-Si:H crystallization from isothermal annealing and its dependence on the substrate used'. Together they form a unique fingerprint.

    Cite this